基于40nm CMOS工艺电路的NBTI退化表征方法  

NBTI Degradation Characterization Method of the Circuit Based on 40 nm CMOS Process

作　　者：卿健[1] 王燕玲 李小进[1] 石艳玲[1] 陈寿面[2] 胡少坚[2] Qing Jian;Wang Yanling;Li Xiaojin;Shi Yanling;Chen Shoumian;Hu Shaojian(School of Information Science and Technology, East China Normal University, Shanghai 200241 , China;Shanghai Integrated Circuit Research Center, Shanghai 201203 , China)

机构地区：[1]华东师范大学信息科学技术学院,上海200241 [2]上海集成电路研发中心,上海201203

出　　处：《半导体技术》2019年第4期302-306,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61704056;61574056)

摘　　要：负偏压温度不稳定性(NBTI)退化是制约纳米级集成电路性能及寿命的主导因素之一,基于40 nm CMOS工艺对NBTI模型、模型提参及可靠性仿真展开研究。首先对不同应力条件下PMOS晶体管NBTI退化特性进行测试、建模及模型参数提取,然后建立了基于NBTI效应的VerilogA等效受控电压源,并嵌入Spectre^(TM)仿真库中,并将此受控电压源引入反相器及环形振荡器模块电路中进行可靠性仿真分析,可有效反映NBTI退化对电路性能的影响。提出了一套完整可行的电路NBTI可靠性预测方法,包括NBTI模型、模型参数提取、VerilogA可靠性模型描述以及电路级可靠性仿真分析,可为纳米级高性能、高可靠性集成电路设计提供有效参考。The negative bias temperature instability(NBTI) degradation is one of most important factors restricting the performance and lifetime of nanometer integrated circuits. The NBTI model,the extraction of model parameters and the reliability simulation were studied based on 40 nm CMOS process. Firstly, the NBTI degradation characteristics of PMOS transistors under different stress conditions were tested and modeled, then the parameters for modeling were extracted. Then, the VerilogA voltage-controlled voltage source(VCVS) based on NBTI effect was established and embedded into SpectreTM library. The VCVS was introduced into the circuit, including the inverters and the ring-oscillators,for reliability simulation, which could effectively reflect the influence of the NBTI on the circuit performance degradation. A comprehensive reliability prediction method for NBTI-introduced circuit was proposed, which involved NBTI modeling, extraction of parameters for model, VerilogA reliability model and circuit level reliability simulation. It can provide an valuable guide for the design of high performance and high reliability nanometer integrated circuits.

关 键 词：负偏压温度不稳定性(NBTI) 模型提参 可靠性仿真 VerilogA 反应-扩散(RD)模型 

分 类 号：TN402[电子电信—微电子学与固体电子学]