一种近阈值电压标准单元特征化建库方法  

A Characterization Method for Standard Cell Library at Near-Threshold Voltage

作　　者：胡伟 安文婷 袁甲[2] HU Wei;AN Wenting;YUAN Jia(College of Physics and Microelectronics Science,Hunan University,Changsha 410082,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]湖南大学物理与微电子科学学院,湖南长沙410082 [2]中国科学院微电子研究所,北京100029

出　　处：《湖南大学学报（自然科学版）》2019年第4期85-90,共6页Journal of Hunan University:Natural Sciences

基　　金：国家自然科学基金资助项目(61306039);湖南省自然科学基金资助项目(2016jj2028)~~

摘　　要：面向近阈值电压下库单元的实际使用情况,针对传统库文件查找表误差较大的问题,提出了一种近阈值电压下对标准单元的特征化建库方法.通过对标准单元实际应用情况的分析,重新界定了查找表的边界;通过分析电路综合结果与电路仿真结果的相对误差,重新确定了查找表的规模;从而提高了近阈值电压下标准单元库准确性.该方法对smic55nmCMOS工艺的库文件在0.6 V电压下特征化建库,并进行误差评估,结果表明,该方法相较于传统方法建立的库文件,准确性提高了16%～63.51%,减小了查找表误差,有效提高了库文件的准确性.According to the actual application of a standard library cell operating in the near-threshold voltage region,and due to the problem of large error in the lookup table of traditional library files,this paper proposed a method to characterize the standard cell in near-threshold voltage region.The method redefined the boundary of the lookup table by analyzing the actual application of standard cell in near-threshold voltage,and by analyzing the relative error between the circuit synthesis result and circuit simulation result,it re-determined the scale of the lookup table,in order to improve the accuracy of standard cell library in near-threshold voltage region.This method was then used to characterize the smic55 nmCMOS process library file in 0.6 V voltage and evaluate the relative error,and the results show that when compared with the library file established by traditional characterize method,the proposed method improved the library file’s accuracy by 16%~63.51%,reduced the error of lookup table,and effectively improved the accuracy of library file.

关 键 词：近阈值 标准单元库 查找表 库文件 

分 类 号：TN492[电子电信—微电子学与固体电子学]