基于GaN器件的半桥式固态射频电源应用研究  

Application Research of Half-bridge Solid-state RF Power Supply Based on GaN Devices

作　　者：谭平平 桂成东 姜力铭 陈文光[1] TAN Pingping;GUI Chengdong;JIANG Liming;CHEN Wenguang(School of Electrical Engineering,University of South China,Hengyang,Hunan 421001,China)

机构地区：[1]南华大学电气工程学院,湖南衡阳421001

出　　处：《南华大学学报（自然科学版）》2019年第2期49-54,60,共7页Journal of University of South China：Science and Technology

摘　　要：随着电力电子行业的发展,射频电源对高效率、轻量化的要求逐渐提高。硅(Si)材料的理论极限,约束了Si功率器件在高频、高压及大功率等场所的应用。基于氮化镓(GaN)半导体材料制备的功率器件与Si器件相比,具有导通阻抗低、输入输出电容小等特性。基于这些特性,采用GaN管设计制作了一款开关频率为2 MHz的半桥式固态射频电源样机。通过电路的设计和优化,样机输出2 MHz的标准正弦波。样机的输出功率为14.9 W时,效率可达到95.5%,功率密度可达到78.9×10-3W/cm3。同时,采用专为射频电源生产的Si功率器件替换掉样机上的GaN器件,验证了GaN器件与Si器件相比,可大幅度提高半桥式固态射频电源的整机效率和功率密度。With the development of the power electronics industry,the requirements for high efficiency and light weight of RF power sources have gradually increased.The theoretical limits of silicon (Si) materials constrain the application of Si power devices in high frequency,high voltage and high power applications.Compared with Si devices,power devices fabricated based on gallium nitride (GaN) semiconductor materials have lower on-resistance and smaller input-output capacitance.Based on these characteristics, a half-bridge solid-state RF power supply with a switching frequency of 2 MHz was designed using a GaN tube design.Through the design and optimization of the circuit,the prototype outputs a standard sine wave of 2 MHz.When the output power of the prototype is 14.9 W,the efficiency can reach 95.5%,and the power density can reach 78.9×10-3 W/cm3.And,by replacing the GaN device on the prototype with the Si power device produced for the RF power supply,it is verified that the GaN device can greatly improve the overall efficiency and power density of the half-bridge solid-state RF power supply compared with the Si device.

关 键 词：射频电源 GaN功率器件 半桥变换器 开关电源 

分 类 号：TM24[一般工业技术—材料科学与工程] TN86[电气工程—电工理论与新技术]