钙钛矿结构锰氧化物薄膜材料的低频1/f噪声研究  

Research on the low frequency 1/f noise in manganese oxide thin film with perovskite structure

作　　者：吴晟 贾文娟[2] 许丽萍[2] 邓云[2] 梁津津[2] 兰卉[2] WU Sheng;JIA Wen-juan;XU Li-ping;DENG Yun;LIANG Jin-jin;LAN Hui(School of Materials Science and Engineering,Tianjin University,Tianjin 300350,China;National Ocean Technology Center,Tianjin 300112,China)

机构地区：[1]天津大学材料科学与工程学院,天津300350 [2]国家海洋技术中心,天津300112

出　　处：《磁性材料及器件》2019年第3期12-16,共5页Journal of Magnetic Materials and Devices

基　　金：国家重点研发计划基金资助项目(2016YFC1400302; 2016YFC1400502);国家海洋技术中心创新基金资助项目(K11600473)

摘　　要：针对A位掺杂钙钛矿结构锰氧化物(A_(1-x)BxMnO_3)薄膜材料的微弱低频1/f噪声信号检测,采用基于双通道信号互相关运算的测试方法,有效消除了接触噪声对本底噪声的影响。通过对薄膜样品La_(0.7)Sr_(0.3)MnO_3的低频1/f噪声和电阻率测量,揭示了由不同衬底材料、不同厚度所引起的薄膜晶格内部应力变化对载流子输运机制的影响。结果表明,薄膜样品的1/f噪声水平和导电特性与材料厚度变化密切相关,La_(0.7)Sr_(0.3)MnO_3/SrTiO_3样品在临界厚度下表现出较低的1/f噪声;而La_(0.7)Sr_(0.3)MnO_3/SrTiO_3/Si样品随着厚度增大,其1/f噪声不断优化。上述结论对基于磁性材料的新型传感器的研制具有重要的参考意义。In view of measurement for the weak noise in A doped manganese oxide (A1-xBxMnO3) thin film with perovskite structure, a test method based on cross-correlation of two channel signals is applied to effectively eliminate the influence of contact noise on background noise. By measuring the low frequency 1/f noise and resistivity of thin film sample from La0.7Sr0.3MnO3, the influences of the internal stress change on the carrier transport mechanism caused by different substrate materials and different thickness can be revealed. The results show that the 1/f noise level and the conductivity are closely related to the thickness change of thin film material. La0.7Sr0.3MnO3/SrTiO3 sample has a very low 1/f noise at a critical thickness. With the increase of thickness, the 1/f noise performance of La0.7Sr0.3MnO3/SrTiO3/Si sample is continuously optimized. The above conclusions present important reference significance for the development of new sensors based on magnetic materials.

关 键 词：钙钛矿结构锰氧化物 薄膜材料 晶格结构 低频1/f噪声 热噪声 

分 类 号：O484.43[理学—固体物理]