一种应用于低功耗电路设计的NCFET器件设计导向  

A Design Guideline for NCFET Applied to Low Power Circuits Design

作　　者：杨廷锋 胡建平[1] 倪海燕[1] YANG Ting-feng;HU Jian-ping;NI Hai-yan(Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211 , China)

机构地区：[1]宁波大学信息科学与工程学院,宁波315211

出　　处：《无线通信技术》2019年第1期17-22,共6页Wireless Communication Technology

基　　金：国家自然科学基金(61671259)

摘　　要：为了能够持续缩小MOSFET的工作电压,增加集成电路设计的灵活性,我们提出了一种铁电-金属-绝缘层-半导体-绝缘层(FMISI)结构的负电容独立栅FinFET(NC-IMG-FinFET)。给出了NC-IMG-FinFET器件及其反相器的分析模型,用于分析器件的性能参数(阈值电压,亚阈值摆幅,导通电流和漏电流)及简单电路的性能指标(延时,功耗和功耗延时积)。结合独立栅的BSIM模型和铁电的Landau-Khalatnikov模型,构造出用于仿真验证的NC-IMG-FinFET的SPICE模型。基于对器件和电路的仿真,优化了铁电参数。仿真结果与理论分析结果一致,表明了NC-IMG-FinFET相比于基准器件更加卓越的性能:NC-IMG-FinFET在更低的工作电压下实现了更小的漏电流,更大的开关电流比,同时亚阈值摆幅突破了60mV/dec的限制;NC-IMG-FinFET电路的功耗和功耗延时积也得到了很大的改进。We have proposed a Negative Capacitance Independent Multi-Gate FinFET(NC-IMG-FinFET) with Ferroelectric-Metal-Insulator-Semiconductor-Insulator(FMISI) structure in order to continually decrease the operating voltage of MOSFET and increase the flexibility of integrated circuit design. The analysis model both device and circuit of NC-IMG-FinFET are addressed, which are used to analyze the performance parameters of the device(Threshold voltage, Sub-threshold Swing(SS), on-current and leakage) and the performance indicators of simple circuits(Delay, power consumption and power delay product(PDP)). The SPICE model of the NC-IMG-FinFET for simulation has been constructed by combining the BSIM model of the Independent Multi-Gate FinFET with the ferroelectric Landau-Khalatnikov model. Based on the simulation of the device and circuit, the ferroelectric parameters are optimized. The simulation results are consistent with the analysis results, indicating that the NC-IMG-FinFET has superior performance compared with the baseline device, in terms of smaller leakage and larger on/off current ratio, while the SS exceeded the limit of 60 mV/dec. The power consumption and PDP of NC-IMG-FinFET circuits also obtain large improvement.

关 键 词：铁电体 负电容场效应管(NCFET) 独立栅FinFET 低功耗 器件优化 器件建模 

分 类 号：TN432[电子电信—微电子学与固体电子学]