石墨烯掺杂对MgB_2块材微观结构和超导性能的影响  

Effect of Graphene Doping on the Microstructure and Superconducting Properties of MgB_2 Bulks

作　　者：刘浩然 金利华[2] 杨芳[2] 王庆阳[2] 熊晓梅[2] 冯建情[2] 李成山[2] 周廉[1,2] Liu Haoran;Jin Lihua;Yang Fang;Wang Qingyang;Xiong Xiaomei;Fen Jianqing;Li Chengshan;Zhou Lian(State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi'an 710072,China;Northwest Institute for Nonferrous Metal Research,Xi'an 710016,China)

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072 [2]西北有色金属研究院,陕西西安710016

出　　处：《稀有金属材料与工程》2019年第4期1256-1259,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(51772250;51372207);陕西省自然科学基金(2017ZDJC-19)

摘　　要：通过直接掺杂石墨烯、石墨烯包覆硼掺杂、石墨烯丙酮溶液掺杂3种方法,系统研究了石墨烯采用不同方法掺杂时MgB_2块材的晶体结构、临界电流密度(J_c)、磁通钉扎性能(F_p)。通过直接掺杂,MgB_2在低场下临界电流密度值得到了明显提高,而包覆法和溶液法掺杂石墨烯由于在空气中氧化严重并没有改善MgB_2超导性能。The graphene doped MgB2 bulks were synthesized by graphene doping directly, graphene-acetone solution doping, and graphene coating B doping, and the microstructure, critical current density, flux pinning properties were studied. The critical current density of MgB2 by graphene doping directly gets significant enhancement at low field. However, the superconducting properties for samples synthesized by solution process and coating method do not improve obviously due to the oxidation decreases the activity of B powders.

关 键 词：超导材料 MGB2 临界电流密度 磁通钉扎 

分 类 号：TM26[一般工业技术—材料科学与工程]