可见/近红外超光谱碲镉汞焦平面研究  

Research on HgCdTe focal plane arrays for ultra-spectrumdetection in Vis/NIR

作　　者：张姗[1] 沈益铭 刘丹[1] 钟艳红[1] 魏彦锋[1] 廖清君[1] 陈洪雷[1] 林春[1,2] 丁瑞军 何力[1] ZHANG Shan;SHEN Yiming;LIU Dan;ZHONG Yanhong;WEI Yanfeng;LIAO Qingjun;CHEN Honglei;LIN Chun;DING Ruijun;HE Li(Key Laboratory of Infrared Imaging Material and Detectors,Shanghai Institute of Technical Physics,CAS, Shanghai 200083, China;School of information Science and Technology,Shanghai 201210)

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]上海科学技术大学信息科学与技术学院,上海201210

出　　处：《应用光学》2019年第3期429-434,共6页Journal of Applied Optics

基　　金：中科院国防科技创新基金项目资助(CXJJ-16S011)

摘　　要：为了满足可见-近红外波段的高光谱分辨率和高灵敏观测需求,采用大面阵、低噪声碲镉汞焦平面制备技术和低损伤衬底去除技术,成功制备了高信噪比大面阵可见/近红外碲镉汞焦平面探测器。无损衬底去除技术采用机械抛光和化学腐蚀相结合的方法,使焦平面的响应波段拓展至400 nm～2 600 nm。采用信号定量化焦平面测试评价手段对可见/近红外碲镉汞焦平面的性能进行评估,640×512 25μm中心距碲镉汞焦平面的波段量子效率可达到88.4%,信噪比达到287,有效像元率大于98%,能够获得清晰的可见和近红外波段图像。To meet the requirement of high-resolution and high- sensitivity observation in visible-near infrared, the HgCdTe focal plane arrays(FPAs) with high signal-to-noise ratio was fabricated based on the large-array low-noise HgCdTe detector manufacture technology and low- damage substrate removal technology. The response of short-wave infrared detector was extended to 400 nm^2 600 nm by the ZnCdTe substrate removed with mechanical thinning and chemical wet etching technology. After the fabrication of the Vis/NIR 640×512 pixel 25 m FPAs, the performance was evaluated with a certain quantity of radiation. The results indicate that the quantum efficiency is approximately 88.4% at 2.32 μm waveband, the effective pixel rate is 98% and the signal-to-noise ratio is 287, the clear imaging quality in Vis/NIR waveband can be obtained.

关 键 词：超光谱探测 可见/近红外成像 碲镉汞 衬底去除 量子效率 

分 类 号：TN219[电子电信—物理电子学]