基于SiC的NPN双极型晶体管设计  

SiC NPN Bipolar Transistor Design

作　　者：冷贺彬 朱平 LENG Hebin;ZHU Ping(School of Instrument and Electronics ,North University of China ,Taiyuan,030000,CHN)

机构地区：[1]中北大学仪器与电子学院,太原030000

出　　处：《固体电子学研究与进展》2019年第2期91-96,137,共7页Research & Progress of SSE

摘　　要：利用高禁带宽度的SiC材料,设计了一种基于SiC的NPN双极型晶体管,该晶体管采用多层缓变掺杂基区结构实现。在完成晶体管结构设计基础上,仿真分析了晶体管的直流电流增益、击穿特性以及频率特性。在工艺方面,设计完成了晶体管制备工艺流程与版图。仿真结果表明,SiC双极型晶体管具有击穿电压高(BV_(CEO)=900 V)、特征频率高(f_T=5 GHz),晶体管增益适中(β=33)等特点。By using high band gap SiC material, a SiC-based NPN bipolar transistor was designed. A multi-layered, slowly-varying doped base structure was implemented in the transistor. Based on the transistor structure design, the DC current gain, breakdown characteristics, and frequency characteristics of the transistor were simulated and analyzed. In terms of process, the transistor fabrication process and layout had been designed. Simulation results show that the SiC bipolar transistor has high breakdown voltage(BVCEO=900 V), high characteristic frequency(fT=5 GHz), and moderate transistor gain(β=33).

关 键 词：NPN双极型晶体管 SIC 工作温度 击穿电压 特征频率 禁带宽度 晶体管增益 

分 类 号：TN386[电子电信—物理电子学]