P-AlInP限制层掺杂对AlGaInP红光LED发光亮度影响  

Effects of P-AlInP Confinement Layer Doping on Red AlGaInP LED Luminescent Intensity

作　　者：高文浩 冯彦斌 李维环 吴超瑜 高鹏 付贤松[1] 宁振动 GAO Wenhao;FENG Yanbin;LI Weihuan;WU Chaoyu;GAO Peng;FU Xiansong;NING Zhendong(School of Electronics and Information Engineering,Tianjin Polytechnic University,Tianjin,300160,CHN;Tianjin Sanan Optoelectronics Co.,Ltd,Tianjin,300160,CHN;Department of Physics,Xiamen University Xiamen,Fujian,361005,CHN)

机构地区：[1]天津工业大学电子与信息工程学院,天津300160 [2]天津三安光电有限公司,天津300160 [3]厦门大学物理系,福建厦门361005

出　　处：《固体电子学研究与进展》2019年第2期127-130,154,共5页Research & Progress of SSE

基　　金：天津市科技支撑;新材料重大专项项目(17YFZCGX00330;18ZXCLGX00080)

摘　　要：针对四元系AlGaInP红光发光二极管在制备过程中,材料的掺杂特性对于器件性能影响巨大,尤其是AlInP限制层材料的掺杂,对于器件光电性能具有明显的影响。在实际生产过程中P型掺杂浓度的波动非常大,明显影响到红光LED的发光均匀性。从不同的AlInP限制层P型掺杂浓度与LED发光亮度的关系入手,探索研究AlInP限制层P型掺杂浓度对LED发光亮度影响的规律,所得研究结果对于LED的器件结构设计以及MOCVD外延材料生长有一定的指导意义。In the preparation process of the quaternary AlGaInP red light-emitting diode, the doping characteristics of the material had great influence on the device performance, especially the doping of the AlInP confinement layer, which had a significant influence on the photoelectric performance of the LED device. In the actual production, the fluctuation of the P-type doping concentration was very large, which obviously affected the uniformity of illumination of the red LED. The relationship between p-doping concentration of AlInP confinement layer and luminescent intensity is studied, and the principle of AlInP confinement layer doping concentration with luminescent intensity can be derived. The study results have a certain guide to LED device design and MOCVD epitaxial material process.

关 键 词：P掺杂 发光二极管 发光强度 

分 类 号：TN312.8[电子电信—物理电子学]