碲镉汞器件光敏元电容测试与分析  

Capacitance Measurement and Analysis of Mercury Cadmium Telluride Photosensitive Elements

作　　者：任士远 林春[1,3] 魏彦锋 周松敏[1] 王溪[1] 郭慧君[1] 陈路 丁瑞军[1,3] 何力[1,3] REN Shiyuan;LIN Chun;WEI Yanfeng;ZHOU Songmin;WANG Xi;GUO Huijun;CHEN Lu;DING Ruijun;HE Li(Key Laboratory of Infrared Imaging Material and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China;Shanghai Tech University,School of Information Science and Technology,Shanghai 210210,China)

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]中国科学院大学,北京100049 [3]上海科技大学信息科学与技术学院,上海210210

出　　处：《红外技术》2019年第5期413-417,共5页Infrared Technology

摘　　要：报道了液氮温度下对HgCdTe器件进行电容测试的方法。标定了仪器寄生电容以及杜瓦寄生电容,并利用该测试结果计算得到PN结区附近的载流子浓度和相应的深度等数据。对比了碲镉汞常规PN结器件与雪崩光电二极管(APD)器件的耗尽层宽度以及N区载流子浓度。A method for measuring the capacitance of HgCdTe devices at liquid nitrogen temperature was discussed in this article.The instrument and the parasitic capacitance of the dewar were both calibrated,after which the carrier concentration near the PN junction and its corresponding depth were computed from C-V curves.Finally,the width of the depletion layer and the carrier concentration in the N region of a HgCdTe conventional PN junction device were compared to those of an avalanche photodiode(APD)device.

关 键 词：HGCDTE 电容 载流子浓度 缓变PN结 

分 类 号：TN305[电子电信—物理电子学]