核探测器前端电子学线性稳压器设计  

The design of a low-dropout voltage regulator used in the front-end electronics nuclear detect

作　　者：柴军营[1,2,3,4,5] 江晓山 张永杰[1,3] 董永伟[1,3] 石峰[1,3] 李陆[1,3] 成伟帅[1,2,4,5] 冷重阳[1,2,4,5] 王铮 吴伯冰 CHAI Junying;JIANG Xiaoshan;ZHANG Yongjie;DONG Yongwei;SHI Feng;LI Lu;CHENGWeishuai;LENG Chongyang;WANG Zheng;WU Bobing(Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;University of Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Particle and Astrophysics, Chinese Academy of Sciences, Beijing 100049, China;Department of Electronics and Telecommunications, Politecnico di Torino, Torino 10129, Italy;Istituto Nazionale di Fisica Nucleare, Sezione di Torino, Torino 10125, Italy)

机构地区：[1]中国科学院高能物理研究所,北京100049 [2]中国科学院大学,北京100049 [3]中国科学院粒子天体重点实验室,北京100049 [4]都灵理工大学电子与通信学院,都灵意大利10129 [5]意大利国家核物理研究所都灵分部,都灵意大利10125

出　　处：《核技术》2019年第5期40-46,共7页Nuclear Techniques

基　　金：中国科学院高能物理所自主部署(No.Y8546160U2);重点基础研究发展计划(No.2014CB845800);国家重点研发计划项目(No.2016YFA040080X);国家自然科学基金(No.11327303HE;No.11503028;No.11473028;No.11375218;No.11575206)资助~~

摘　　要：根据核探测器前端电子学的特点,改进传统的低压差电压稳压器(Low Drop-Out regulator,LDO)结构,得到对外部电容容值和等效串联电阻(Equivalent Series Resistance,ESR)鲁棒的新型LDO,特别适合于核探测器的前端电子学领域。这一新型LDO结构对负载电容的鲁棒性比较强,而且电压净空低于200 mV,可以提升电源的效率。此外,这一结构电源的负载瞬态恢复时间比较小,小于400 ns,适用于模拟电路和模拟数字混合电路。本设计采用美国IBM公司的130 nm制程互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺,为北京谱议(BESIII)的CGEM(Cylindrical Gas Electron Multipliers)探测器的前端电子学设计做电源供电;并为LHC(Large Hadron Collider)的第三代像素探测器的电源供电做技术储备。[Background] As nuclear detectors become more and more channels with smaller and smaller volume, front-end electronics tends to adopt CMOS (complementary metal oxide semiconductor) ASIC designs. The ASIC has low power consumption, small parasitic capacitance and small size, hence the power supply has a tendency to integrate at the front end.[Purpose] This study aims to design a new kind of low-dropout (LDO) structure that is suitable for the front-end power supply of nuclear detectors and robust to the process and has no capacitance.[Methods] Based on the classical low-dropout (LDO) structure, complementary metal oxide semiconductor (CMOS) process using IBM 130 nm process was employed to realize the new LDO structure. A novel LDO robust to external capacitance value and equivalent series resistance (ESR) was obtained. This comprehensive performance of the design has the advantage of strong robustnes to load capacitance, hence is siutable for the front end of the nuclear detector.[Results] Its recovery time of the transient response is less than 400 ns and the drop out voltage is below 200 mV. All these futures are especially suitable for the front end, which is often a hybrid circuit.[Conclusion] This design is used for the cylindrical gas electron multipliers (CGEM) of BESIII update project, it is also the technical reserve for the power supply of third generation pixel detector in large hadron collider (LHC).

关 键 词：低压差电源稳压器 前端电子学 专用集成电路 

分 类 号：TL99[核科学技术—核技术及应用]