CuO-B2O3掺杂对BaAl2Si2O8陶瓷结构及微波介电性能的影响  

Effect of CuO-B2O3 doping on structure and microwave dielectric properties of BaAl2Si2O8 ceramics

作　　者：黄龙 丁士华[1] 严欣堪 宋天秀[1] 张云 HUANG Long;DING Shihua;YAN Xinkan;SONG Tianxiu;ZHANG Yun(School of Materials Science and Engineering,Xihua University,Chengdu 610039,China)

机构地区：[1]西华大学材料科学与工程学院

出　　处：《电子元件与材料》2019年第6期32-37,共6页Electronic Components And Materials

基　　金：教育部春晖计划项目(Z2011077);国家自然科学基金(11074203);四川省特种材料及制备技术重点实验室开放课题资助项目(szjj2017-059);四川省教育厅资助项目(14ZB0126);四川省粉末冶金工程技术中心资助项目(SC-FMYJ2017-04;SC-FMYJ2017-07);西华大学研究生创新基金(ycjj2018012;ycjj2018013)

摘　　要：采用固相反应法制备BaAl2Si2O8-x(CuO-B2O3)(质量分数x=0%, 1%, 1.5%, 2%, 2.5%)陶瓷。探究了添加不同量的CuO-B2O3(CB)烧结助剂对BaAl2Si2O8(BAS)陶瓷的烧结温度、结构及微波介电性能的影响。结果表明:质量分数1%的CB烧结助剂可促进BAS晶体结构由六方相全部转变为单斜相,并且CB烧结助剂添加量在质量分数2.5%范围以内,无第二相生成。添加质量分数1%的CB烧结助剂可使BAS陶瓷烧结密度增加到最大值,并能将烧结温度由1400℃降低至1250℃,制备的BAS陶瓷的相对介电常数(εr)和品质因数(Q f)达到最大值,并且谐振频率温度系数(τf)的绝对值也减小至最小值,其介电性能为:εr=6.47, Q f=30198GHz,τf=-14.78×10^-6℃^-1。TheBaAl2Si2O8-x(CuO-B2O3)(mass fraction x=0%, 1%, 1.5%, 2%, 2.5%) ceramics were prepared by solid state sintering. We investigate the sintering temperature, structure and microwave dielectric properties of BaAl2Si2O8(BAS) with different contents of CuO-B2O3(CB) sintering additives. The results show that 1% CB sintering additives can promote the transformation from hexacelsian to celsian, and no second phase appears at x≤2.5%. The 1% CB sintering additives can also achieve the maximum bulk density and reduce the sintering temperature from 1400 ℃ to 1250 ℃. With the optimal 1% CB sintering additives, theBASsinteredat1250℃hashighQ fof30198GHz,εrof6.47andτfof-14.78×10^-6℃^-1.

关 键 词：钡长石 烧结助剂 六方相 单斜相 晶体结构 介电性能 

分 类 号：TQ174[化学工程—陶瓷工业]