LiF添加对YAG陶瓷微波介电性能的影响  

Effects of LiF addition on microwave dielectric properties of YAG ceramics

作　　者：胡杰 吕学鹏[1,2] 许泉辉 李帅 汪家瑜 HU Jie;LYU Xuepeng;XU Quanhui;LI Shuai;WANG Jiayu(College of Materials Science and Engineering,Nanjing Institute of Technology,Nanjing 211167,China;Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology,Nanjing 211167,China)

机构地区：[1]南京工程学院材料工程学院,江苏南京211167 [2]江苏省先进结构材料与应用技术重点实验室,江苏南京211167

出　　处：《电子元件与材料》2019年第6期38-42,49,共6页Electronic Components And Materials

基　　金：国家自然科学基金(NSFC-51602145);江苏省大学生实践创新训练项目(201711276074H);南京工程学院大学生科技创新项目(TZ20170004);江苏高校优秀科技创新团队

摘　　要：采用常规固相烧结法制备了YAG陶瓷,并研究了烧结温度和LiF添加量对YAG陶瓷微观结构和微波介电性能的影响。结果表明,LiF的添加不仅可以有效降低YAG陶瓷的烧结温度,而且显著提高其微波介电性能。当LiF添加量为质量分数5%时,YAG陶瓷经1500℃烧结6h后的相对密度为97.5%,显微组织较均匀、致密,具有优异的微波介电性能:εr=11.3,Q·f=67130GHz,τf=-53.4×10^-6℃^-1。当LiF添加量过多时,YAG陶瓷的气孔率增加,Q·f值显著下降。The YAG ceramics were prepared by the conventional solid-state reaction method. We studied the effects of sintering temperature and LiF addition on the microstructure and microwave dielectric properties of YAG ceramics. The results show that the additions of LiF not only effectively reduce the sintering temperature of YAG ceramics but also remarkably improve their microwave dielectric properties. When the LiF addition is 5%(mass fraction), the YAG ceramics, sintered at 1500 ℃ for 6 h, have large relativedensity(~97.5%),homogeneous and dense microstructure,and excellent microwave dielectric properties(εr^11.3, Q f ~67130GHz, andτf^-53.4×10^-6℃^-1). When the addition of LiF is excess,the porosity of YAG ceramics increase,and the value of Q f decreased considerably.

关 键 词：YAG陶瓷 烧结温度 LiF添加量 微波介电性能 

分 类 号：TM28[一般工业技术—材料科学与工程]