籽晶偏向对高纯半绝缘4H-SiC晶体影响的研究  

Research into the Influencing Factor of Seed on High Purity 4H-SiC Crystal

作　　者：侯晓蕊 王英民 魏汝省 李斌 王利忠 田牧 刘燕燕 淮珍 王程 王光耀 HOU Xiaorui;WANG Yingmin;WEI Rusheng;LI Bin;WANG Lizhong;TIAN Mu;LIU Yanyan;HUAI Zhen;WANG Cheng;WANG Guangyao(Shanxi Semicore Crystal Co.,Ltd.,Taiyuan 030024,China;The 2^nd Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]山西烁科晶体有限公司,山西太原030024 [2]中国电子科技集团公司第二研究所,山西太原030024

出　　处：《电子工业专用设备》2019年第3期1-3,16,共4页Equipment for Electronic Products Manufacturing

基　　金：国际科技合作项目(2013DFR10020);山西省自然科学基金(2012011020-2);中国电子科技集团公司技术创新基金(5511234);山西省科技重大专项(20181101007)

摘　　要：采用PVT法得到高纯4H-SiC体单晶。研究了0°、1°、4°晶体对晶体台阶流、晶体结晶质量、晶体缺陷、晶体电学性能的影响;晶体台阶流采用奥林巴斯显微镜进行表征,晶体缺陷采用莱卡体系显微镜进行表征,晶体结晶质量采用高分辨XRD进行表征,晶体电学性能采用非接触电阻率测试仪进行表征。实验结果表明:4°籽晶生长的晶体缺陷最少,1°与4°籽晶生长的晶体结晶质量相当,0°籽晶生长的晶体电学性能最均匀。High purity 4H-SiC single crystals grown by physical vapor transport were investigated.This paper studied the effects of 0°seed,1°seed and 4°seed on crystal defect,crystal quality,electrical properties.The step flow characterized by Olympus microscope,crystal defect characterized by Leica microscope,crystal quality characterized by high resolution XRD,electrical properties characterized by non-contact electrical resistivity meter.Experiments indicated that 4H-SiC single crystals grown by 4°seed had minimal defects.4H-SiC single crystals grown by 1°seed and 4°seed had similar crystallization quality.4H-SiC single crystals grown by 0°seed had the most uniform resistivity.

关 键 词：高纯4H-SiC 籽晶 晶片缺陷 结晶质量 电学性能 

分 类 号：TN304.07[电子电信—物理电子学]