基于0.13μm SiGe BiCMOS工艺的在片背腔贴片天线（英文）  

Cavity-backed on-chip patch antenna in 0.13 μm SiGe BiCMOS technology

作　　者：肖军 李秀萍[1,2] 齐紫航 朱华 冯魏巍[1,2] XIAO Jun;LI Xiu-Ping;QI Zi-Hang;ZHU Hua;FENG Wei-Wei(School of Electronic Engineering,University of Posts and Telecommunications,Beijing,China,100876;Beijing Key Laboratory of Work Safety Intelligent Monitoring(Beijing University of Posts and Telecommunications),Beijing 100876,China)

机构地区：[1]北京邮电大学电子工程学院,北京100876 [2]北京安全生产智能监控北京市重点实验室,北京100876

出　　处：《红外与毫米波学报》2019年第3期310-314,337,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(61601050);the project(6140135010116DZ08001,6140518040116DZ02001)

摘　　要：提出了一款基于0.13μmSiGeBiCMOS工艺设计、加工的340GHz在片背腔贴片天线.辐射贴片位于AM 金属层带状线馈线置于 LY 金属层并通过连接 AM 金属层和 LY 金属层的金属化通孔对辐射贴片馈电.通过设计连接 AM 金属层和 M1 金属层的金属化通孔形成谐振腔体展宽了天线阻抗带宽、提升了天线辐射性能.天线的仿真阻抗带宽(S11≤-10dB)为9.2GHz(335.6~344.8GHz).天线在340GHz处的仿真增益为3.2dBi.天线的整体尺寸为0.5×0.56mm2.This letter presents a 340 GHz cavity backed on chip patch antenna design and fabrication using standard 0.13 μm SiGe BiCMOS technology. The patch placed at AM layer is fed by a stripline at LY layer through via holes from LY to AM layer. The via holes are built between the top metal layer (AM layer) and the ground plane (M1 layer) to form a cavity which improves the impedance matching bandwidth and the radiation performances of the antenna. The proposed antenna shows a simulated impedance bandwidth of 9.2 GHz from 335.6 to 344.8 GHz for S11 less than -10 dB. The simulated gain of the antenna at 340 GHz is 3.2 dBi. The total area of the antenna is 0.5×0.56 mm^2.

关 键 词：0.13μm SIGE BICMOS 工艺 背腔 贴片天线 在片天线 

分 类 号：TN827.3[电子电信—信息与通信工程]