0.1～325 GHz频段InP DHBT器件在片测试结构建模  

On-wafer test structures modeling for the InP DHBTs in the frequency range of 0.1 ～325 GHz

作　　者：徐忠超 刘军[2] 钱峰[1] 陆海燕[1] 程伟[1] 周文勇[2] XU Zhong-Chao;LIU Jun;Qian Feng;LU Hai-Yan;CHENG Wei;ZHOU Wen-Yong(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute,Nanjing 210016,China;Key Laboratory for RF Circuits and Systems of Ministry of Education,Hangzhou Dianzi University,Hangzhou 310017,China)

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路国家级重点实验室,江苏南京210016 [2]杭州电子科技大学教育部射频电路与系统重点实验室,浙江杭州310017

出　　处：《红外与毫米波学报》2019年第3期345-350,380,共7页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61331006)~~

摘　　要：给出了 InP DHBT 器件在片测试用到的开路和短路结构的等效电路模型.模型拓扑结构基于物理结构建立并对其在亚毫米波段的高频寄生进行相对完整的考虑.模型的容性和阻性寄生采用解析提取技术从开路结构低频测试数据中获取.模型的高频趋肤效应采用传统物理公式计算初值并结合短路测试结构的低频解析提取结果对计算公式进行修正使其适用于实际测试结构建模.模型拓扑结构和参数提取方法采用 0.5 μm InP DHBT 工艺上设计所得开路、短路测试结构进行验证.模型仿真和测试所得S参数在0.1~325GHz频段内吻合地很好.The equivalent circuit models for the open and short structures used in InP DHBT on-wafer testing are presented. The model topologies were physically based. The high frequency parasitics of the structures were considered in the model topologies completely. The capacitive and resistive parasitics were extracted from the low frequency measurements of the open structure directly. Tradition physical formulations were employed to have an initial determination of the skin effect elements of the models, and further corrected by using the analytically extracted results from the low frequency measurements of the short structure,which enables an accurate formulation for the test structures modeling. The models and the modeling methodology were verified using the open and short structures manufactured in a 0. 5 μm InP DHBT technology. Excellent agreements of the model simulated and measured results are achieved over the frequency range of 0. 1 ~ 325 GHz.

关 键 词：在片测试结构 等效电路模型 参数提取 太赫兹 

分 类 号：TN32[电子电信—物理电子学]