机构地区:[1]Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China [2]Laboratory of Micro-Nano Photonic and Optoelectronic Materials and Devices, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
出 处:《Journal of Semiconductors》2019年第6期63-68,共6页半导体学报(英文版)
基 金:supported by the National Natural Science Foundation of China(Nos.11504111,61574060);the Projects of Science and Technology Commission of Shanghai Municipality(Nos.15JC1401800,14DZ2260800);the Program for Professor of Special Appointment(Eastern Scholar);the Shanghai Rising-Star Program(No.17QA1401400);the Young Elite Scientists Sponsorship(YESS)Program by CAST;the Fundamental Research Funds for the Central Universities
摘 要:Two-dimensional(2D) transition metal dichalcogenides alloys are potential materials in the application of photodetectors over a wide spectral range due to their composition-dependent bandgaps. The study of bandgap engineering is important for the application of 2D materials in devices. Here, we grow the Mo1-xWxSe2 alloys on mica, sapphire and SiO2/Si substrates by chemical vapor deposition(CVD) method. Mo1-x Wx Se2 alloys are grown on the mica substrates by CVD method for the first time. Photoluminescence(PL) spectroscopy is used to investigate the effects of substrates and interlayer coupling force on the optical bandgaps of as-grown Mo1-xWxSe2 alloys. We find that the substrates used in this work have an ignorable effect on the optical bandgaps of as-grown Mo1-xWxSe2. The interlayer coupling effect on the optical bandgaps of as-grown Mo1-xWxSe2 is larger than the substrates effect. These findings provide a new way for the future study of the growth and physical properties of 2D alloy materials.Two-dimensional(2D) transition metal dichalcogenides alloys are potential materials in the application of photodetectors over a wide spectral range due to their composition-dependent bandgaps. The study of bandgap engineering is important for the application of 2D materials in devices. Here, we grow the Mo1-xWxSe2 alloys on mica, sapphire and SiO2/Si substrates by chemical vapor deposition(CVD) method. Mo1-xWxSe2 alloys are grown on the mica substrates by CVD method for the first time. Photoluminescence(PL) spectroscopy is used to investigate the effects of substrates and interlayer coupling force on the optical bandgaps of as-grown Mo1-xWxSe2 alloys. We find that the substrates used in this work have an ignorable effect on the optical bandgaps of as-grown Mo1-xWxSe2. The interlayer coupling effect on the optical bandgaps of as-grown Mo1-xWxSe2 is larger than the substrates effect. These findings provide a new way for the future study of the growth and physical properties of 2D alloy materials.
关 键 词:Mo1-xWxSe2 SUBSTRATES TWO-DIMENSIONAL materials BANDGAPS PHOTOLUMINESCENCE
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