面向高效单结GaInP太阳电池的介质复合纳米结构的仿真研究  

Simulations on dielectric composite nanostructures for high efficiency single-junction GaInP solar cells

作　　者：王岩岩[1,2] 王刘丽 王洁 周炜曜 张瑞英[2] WlNG Yan-yan;WXNG Liu-li;WXNG Jie;ZHOU Wei-yao;ZHANG Rui-ying(Wenzheng College,Soochow University,Suzhou 215104,China;Division of Advanced Materials,Suzhou Instituteof Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]苏州大学文正学院,江苏苏州215104 [2]中国科学院苏州纳米技术与纳米仿生研究所,先进材料部,江苏苏州215123

出　　处：《光电子．激光》2019年第5期474-480,共7页Journal of Optoelectronics·Laser

基　　金：江苏省高等学校大学生创新创业训练计划项目(201713983011X);江苏省重点研发计划-产业前瞻与共性关键技术项目(BE2016083);国家自然基金项目(51202284);江苏省基础研究计划(自然科学基金)-青年基金项目(BK20180208)资助项目

摘　　要：以实现宽谱减反介质复合纳米结构表面的高效单结GaInP太阳电池为目标,利用严格耦合波分析理论,仿真研究了该电池表面的介质复合纳米结构对太阳电池宽谱减反、归一化吸收、最大化理想效率的影响。该介质复合纳米结构从上往下依次为SiO2纳米锥、SiO2介质层和SiNx介质层,通过对SiO2纳米锥占空比、深宽比以及对SiO2和SiNx介质层厚度等参数的系列仿真最终优化出适用于单结GaInP电池的表面结构。结果表明:当SiO2纳米锥底部直径D=550 nm、高度H=650nm、SiNx介质层厚度为60 nm时电池具有最高的最大化理想转换效率为28.58%。上述结果为后期实验以及该类电池实现规模化生产奠定了基础。Broadband antireflection of dielectric composite nanostructures on the surface of single-junction GaInP solar cellsis demonstrated through rigorous coupled-wave analysis(RCWA) method.A systematic simulation of the effect on broadband antireflection,normalized absorption and ultimate efficiency of the dielectric composite nanostructures decorated solar cells was done.Therein,these dielectric composite nanostructures consist of SiO2 nanocones and their underlying thin films,including SiO2 and SiNx dielectric layers.The optimized dielectric composite nanostructures are achieved by the systematically simulation of their duty circle,aspect ratio,the underlying material and its thickness.The results show that the ultimate efficiency of 28.58% is achieved when the diameter of the SiO2 nanocone the height of the SiO2 nanocone and the thickness of the underlying SiNx dielectric layer are 550 nm,650 nm and 60 nm,respectively.Such an investigation provides a valuable guidance for these solar cells to achieve higher conversion efficiency through surface decoration.

关 键 词：介质复合纳米结构 宽谱减反 RCWA GaInP电池 

分 类 号：N39[自然科学总论]