Electrical characteristics and detailed interfacial structures of Ag/Ni metallization on polycrystalline thermoelectric SnSe  

作　　者：Yeongseon Kim Younghwan Jin Giwan Yoon In Chung Hana Yoon Chung-Yul Yoo Sang Hyun Park 

机构地区：[1]Separation and Conversion Materials Laboratory, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea [2]School of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34142, Republic of Korea [3]Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea [4]School of Chemical and Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea

出　　处：《Journal of Materials Science & Technology》2019年第5期711-718,共8页材料科学技术（英文版）

基　　金：supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP);the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20172010000830);supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2015R1A5A1036133)

摘　　要：SnSe is a promising thermoelectric material with a high figure of merit in single crystal form, which has stimulated continuous research on polycrystalline SnSe. In this study, we investigated a metallization techniques for polycrystalline SnSe to achieve highly efficient and practical SnSe thermoelectric modules. The Ag/Ni metallization layers were formed on pristine polycrystalline SnSe using various deposition technique: sputter coating Ni, powder Niand foil Ni by spark plasma sintering. Structural analysis demonstrated that the microstructure and con tact resistance could be different according to the metallization process, despite using the same metals. The Ag/Ni metallization layer using foil Ni acted as an effective diffusion barrier and minimized electrical contact resistance (2.3×10^-4Ωcm^2). A power loss in the thermoelectric module of only 5% was demonstrated using finite element simulation.SnSe is a promising thermoelectric material with a high figure of merit in single crystal form, which has stimulated continuous research on polycrystalline SnSe. In this study, we investigated a metallization techniques for polycrystalline SnSe to achieve highly efficient and practical SnSe thermoelectric modules. The Ag/Ni metallization layers were formed on pristine polycrystalline SnSe using various deposition technique: sputter coating Ni, powder Ni and foil Ni by spark plasma sintering. Structural analysis demonstrated that the microstructure and contact resistance could be different according to the metallization process, despite using the same metals. The Ag/Ni metallization layer using foil Ni acted as an effective diffusion barrier and minimized electrical contact resistance(2.3 × 10-4 Ω cm2). A power loss in the thermoelectric module of only 5% was demonstrated using finite element simulation.

关 键 词：THERMOELECTRIC METALLIZATION ELECTRIC CONTACT material INTERFACE microstructure SnSe 

分 类 号：TG[金属学及工艺]