与Si CMOS兼容的Graphene/MoS2异质结全差分光电探测器和读出电路  

Graphene/MoS2 heterojunction fully differential photodetector and readout circuit compatible with Si CMOS

作　　者：胡跃文 谢生 叶崇光 周高磊 毛陆虹 HU Yue-wen;XIE Sheng;YE Chong-guang;ZHOU Gao-lei;MAO Lu-hong(School of Electrical and Information Engineering,Tianjin University,Tianjin 300072,China;School of Microelectronics,Tianjin University,Tianjin 300072,China)

机构地区：[1]天津大学电气自动化与信息工程学院,天津300072 [2]天津大学微电子学院,天津300072

出　　处：《光电子．激光》2019年第4期347-352,共6页Journal of Optoelectronics·Laser

基　　金：集成光电子学国家重点实验室开放课题(IOSKL2017KF07)资助项目

摘　　要：提出了一种基于Graphene/MoS2异质结的全差分光电探测器。利用标准半导体微纳加工技术,制作了有效区域为2.3μm×10μm的Graphene/MoS2异质结结构,用以产生差分光电流;使用0.18μmCMOS工艺设计了差分放大与恒压控制电路,实现光电流到电压的转换和放大。结果表明:在白光照射下,单个Graphene/MoS2异质结结构光响应度达2435A/W。差分光生电流经过差分放大器后,以电压形式输出,总光响应度加倍。该全差分光探测器基于新型二维材料,对可见光具有较高的灵敏度,在可见光探测和成像领域具有广阔的应用前景。A fully differential photodetector based on Graphene/MoS2 heterojunction is proposed in this paper.A Graphene/MoS2 heterojunction structure with an effective region of 2.3 μm×10 μm is manufactured by using standard semiconductor micro nano processing technology which can be used to produce differential photocurrents.A differential amplifying and constant voltage control circuit is designed with 0.18 μm complementary metal oxide semiconductor(CMOS) technology to convert the photocurrent signal from differential photodetors into the voltage signal,and realize a certain amount of amplification.Results show that the photoresponse for a single Graphene/MoS2 heterojunction detector is up to 2 435 A/W under the illumination of white light.After the differential photocurrents passing through the fully differential amplifier,they can be converted into voltage signals,and the total photoresponse amplitude of the fully differential detector also can be twice as much as single ones.The fully differential photodetector based on novel two-dimensional(2 D) materials has a strong sensitivity to the visible light.This kind of detector will have a wide application prospect in the field of visible light detection and imaging.

关 键 词：Graphene/MoS2异质结 二维材料 全差分光电探测电路 光响应度 

分 类 号：TN256[电子电信—物理电子学]