纳米沟道真空场发射三极管的制备及其特性研究  

Fabrication and Properties of Vacuum Field Emission Triode with Nanoscale Channel

作　　者：龙铭刚 吴胜利[1] 刘逸为 张劲涛[1] Long Minggang;Wu Shengli;Liu Yiwei;Zhang Jintao(Key Laboratory for Physical Electronics and Devices of the Ministry of Education,Xi'an Jiaotong University,XV an 710049 ,China)

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室

出　　处：《真空科学与技术学报》2019年第5期414-419,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金资助(61771383)

摘　　要：基于表面传导电子发射源制备技术制备了一种平面底栅型真空场发射三极管(VFET),器件在真空中实现了良好的栅控特性和场发射特性,并初步获得了在大气环境中的电学性能。采用不同厚度的氧化钯(PdO)作为导电薄膜,通过电形成工艺使导电薄膜龟裂制备真空沟道,研究分析了导电薄膜厚度对真空沟道形成、真空及大气环境下器件电子发射性能的影响。结果表明,PdO薄膜过薄会因其电阻较大而无法聚集足够的焦耳热使薄膜龟裂形成真空沟道,过厚则不能使薄膜完全断裂形成真空沟道;在保证可形成真空沟道的情况下,选择更薄的PdO薄膜有利于降低电形成电压并获得更窄的真空沟道;当PdO厚度为60 nm时,可通过更低的电形成电压获得更窄的真空沟道,使器件拥有更好的电学性能。Planar vacuum field emission triode ( VFET) with bottom-gate was fabricated. The original work involved the formation of nanoscale vacuum channel for electron transport, a complete fracture formed in conductive PdO film by electro-forming, a fracture formation technique in fabricating surface conduction electron emitter. We found that the PdO film thickness significantly affects the completeness of the nano-channel and VFET performance. To be specific ,no complete fracture formed in a PdO film too thin ( too thick) because of high resistance ( incom plete fracture). A complete nano-channel formed in an optimized PdO film, 60 nm in thickness, at a low electro- forming voltage. The test results indicated that the prototyped VFET with the nano-channel displays good gate-con trol and field emission characteristics in vacuum, and shows some promising electrical properties in ambient environ ment.

关 键 词：真空场发射三极管 导电薄膜厚度 真空沟道 场发射特性 栅控特性 

分 类 号：TN11[电子电信—物理电子学] TN48