真空电弧熔炼制备U3Si2块体及其杂质状态研究  

Major Surface Impurities of Vacuum Arc Melted U3Si2 Bulk Material:An Experimental Study

作　　者：闫婷文 谢东华[2] 陈志磊[2] 蒋春丽[1] 胡殷[1] Yan Tingwen;Xie Donghua;Chen Zhilei;Jiang Chunli;Hu Yin(Science and Technology on Surface Physics and Chemistry Laboratory,Mianyang 621700,China;China Academy of Engineering Physics,Mianyang 621700,China)

机构地区：[1]表面物理与化学重点实验室,绵阳621700 [2]中国工程物理研究院材料研究所,绵阳621700

出　　处：《真空科学与技术学报》2019年第5期441-446,共6页Chinese Journal of Vacuum Science and Technology

基　　金：自然科学基金资助项目(U1630250);中国工程物理研究院基金资助项目(YZJJLX2016006)

摘　　要：U3Si2作为核燃料,相比于传统的UO2燃料,具有高的铀密度和良好的导热性等优点,是极具潜力的下一代核燃料候选。U3Si2多采用电弧熔炼的方法制备,但目前对U3Si2材料的表面杂质状态的研究仍有待深入开展。本文通过真空四电弧熔炼方法制得了U3Si2样品。通过X射线衍射仪分析了样品结构与取向特性。能量色散谱仪以及X射线光电子能谱分析表明,电弧熔炼得到的U3Si2样品主要含有C、O杂质,其中C杂质属于表面附着,而O杂质来源于表面氧化,以及熔炼过程中引入的少量O杂质。The U3Si2 bulk material, an advanced nuclear fuel with good thermal conductivity and high uranium density, was prepared by tetra-arc melting in vacuum. The microstructures and depth profile of main impurities were characterized with X-ray diffraction spectroscopy, energy dispersive spectroscopy and X-ray photoelectron spectroscopy. The results show that the main uniformly distributed impurities were carbon and oxygen. To be specific, a de creasing carbon depth profile possibly originated from oxidation of hydrocarbon in residue gas and carbon surface segregation;and the oxygen depth distribution probably resulted from surface oxidation in argon ion sputtering and oxygen doping or weak oxidation in arc melting of liquid U3Si2.

关 键 词：U3Si2 电弧熔炼 杂质状态 表面氧化 

分 类 号：TB79[一般工业技术—真空技术] TL211[核科学技术—核燃料循环与材料]