Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphenebased field-effect transistors  

低温制备高质量六方氮化硼晶畴、薄膜及其在石墨烯基场效应晶体管中的应用（英文）

作　　者：Lifeng Wang Bin Wu Hongtao Liu Hanlin Wang Yuyu Su Weiwei Lei PingAn Hu Yunqi Liu 王立锋;武斌;刘洪涛;王翰林;苏玉玉;类伟巍;胡平安;刘云圻(Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China;Key Lab of Microsystem and Microstructure, Ministry of Education, Harbin Institute of Technology, Harbin 150080, China;Institute for Frontier Materials, Deakin University, Waum Ponds, Victoria 3216, Australia)

机构地区：[1]Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China [2]Key Lab of Microsystem and Microstructure, Ministry of Education, Harbin Institute of Technology, Harbin 150080, China [3]Institute for Frontier Materials, Deakin University, Waum Ponds, Victoria 3216, Australia

出　　处：《Science China Materials》2019年第8期1218-1225,共8页中国科学（材料科学（英文版）

基　　金：supported by the National Basic Research Program of China(2016YFA0200101);the National Natural Science Foundation of China(21633012 and 61890940);Beijing Municipal Science&Technology Commission(Z161100002116025);Chinese Academy of Sciences,the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB30000000 and XDB12030100);Beijing National Laboratory for Molecular Sciences(BNLMS)

摘　　要：Two dimensional (2D) materials have attracted intense attention owing to their unique physical and chemical properties and the realization of artificial structure and functionality [1]. Insulating hexagonal boron nitride (h-BN), a one-atom thick crystal with a large bandgap (6 eV)[2], superior chemical and thermal stability, and a higher thermal conductivity, is known as “white graphene” due to their similar structure.a lattice mismatch of only 1.6%.二维六方氮化硼是一种理想的石墨烯电学器件介电层材料,然而,制备低成本和高质量的氮化硼材料仍是一个挑战.本文使用等离子体化学气相沉积法, 500°C下在铜箔衬底上制备了三角形的BN晶畴及其薄膜.通过使用锡箔纸包裹原料的方法避免了残留原料在BN表面的沉积.当BN作为石墨烯场效应晶体管的介电层时,基于石墨烯的场效应器件空穴与电子的迁移率分别为10500和4750 cm2V^-1s^-1,明显优于在高温条件下制备的BN作为介电层的石墨烯器件,间接表明了该方法可得到高质量的BN.另外,本工作也揭示了氮化硼的质量对石墨烯场效应器件的性能至关重要.

关 键 词：六方氮化硼 场效应晶体管 低温制备 石墨烯 等离子体化学气相沉积法 质量 晶畴 薄膜 

分 类 号：TQ128[化学工程—无机化工] TN386[电子电信—物理电子学]