半导体光生电荷分离及迁移原位X射线光电子能谱仪表征分析系统的研制  

Development of Characterization System of Synchronous Illumination-X-Ray Photoelectron Spectrometer of Photocharge Separation and Transfer in Semiconductors

作　　者：黄晓卷[1,2] 张亚军 刘佳梅[1,2] 焦正波[2] 牛建中[2] HUANG Xiao-juan;ZHANG Ya-jun;LIU Jia-mei;JIAO Zheng-bo;NIU Jian-zhong(Public Technical Service Center, Lanzhou Institute of Chemical Physics, Lanzhou 730000, China;State Key Laboratory for Oxo Synthesis & Selective Oxidation, Lanzhou Institute of Chemical Physics, CAS, Lanzhou 730000, China)

机构地区：[1]中国科学院兰州化学物理研究所公共技术服务中心,甘肃兰州730000 [2]中国科学院兰州化学物理研究所羰基合成与选择氧化国家重点实验室,甘肃兰州730000

出　　处：《分析测试技术与仪器》2019年第2期98-100,共3页Analysis and Testing Technology and Instruments

基　　金：中国科学院仪器设备功能开发技术创新项目(2018gl06)

摘　　要：在确保X射线光电子能谱仪(XPS)原有超高真空系统及性能指标的基础上,设计并研制出一套适用于半导体光生电荷分离及迁移的原位XPS分析测试系统.将XPS与半导体光照体系相结合,实现了外载激发光源与X射线同步照射于半导体表面,观测并记录样品中特征元素结合能峰位数据.通过对比光照前后结合能峰位变化,判定光致激发半导体材料光生电荷分离及迁移的方向及确定其量化数据.On the premise of ensuring the ultra-high vacuum system and performance index of the original X -ray photoelectron spectrometer (XPS). A synchronous illumination-XPS characterization system for photocharge separation and transfer of semiconductor photocatalysis has been designed and developed. By combining XPS and the semiconductor photocatalytic system, the synchronous illumination of the external light source and X -ray surface of the semiconductor was realized, the binding energy data of characteristic elements before and after light irradiation were observed and recorded. The result infered the interface atomic photocharge separation and migration process over photocatalyst.

关 键 词：X射线光电子能谱仪 半导体 光生电荷 

分 类 号：O657.62[理学—分析化学]