Ba-Pb双掺杂与晶粒细化的协同调整对BiCuSeO半导体陶瓷热电性能的影响  

Effect of synergistic adjustment of Ba-Pb doping and grain refinement on thermoelectric property of BiCuSeO semiconductor ceramics

作　　者：苏逸斯 冯波 胡晓明[1,2] 刘培海 李光强[1,2] 樊希安[1,2] SU Yisi;FENG Bo;HU Xiaoming;LIU Peihai;LI Guangqiang;FAN Xi’an(The State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology, Wuhan 430081, China;National-Provincial Joint Engineering Research Center of High Temperature Materials and Lining Technology,Wuhan University of Science and Technology, Wuhan 430081, China)

机构地区：[1]武汉科技大学耐火材料冶金国家重点实验室,武汉430081 [2]武汉科技大学省部共建高温材料与衬里技术联合工程研究中心,武汉430081

出　　处：《粉末冶金材料科学与工程》2019年第3期239-247,共9页Materials Science and Engineering of Powder Metallurgy

基　　金：国家自然科学基金资助项目(51674181,11074195);湖北省教育厅重点项目(D2015103)

摘　　要：对 BiCuSeO 半导体陶瓷进行 Ba/Pb 双掺杂,通过机械球磨和放电等离子烧结制备 Bi1 2xBaxPbxCuSeO(x=0,0.06)半导体陶瓷材料,系统研究 Ba/Pb 双掺杂和球磨时间对 BiCuSeO 材料显微结构、热电性能和硬度的影响。结果表明,用少量 Ba/Pb 部分替代 BiCuSeO 中的 Bi,可显著提高材料的电导率和功率因子,而球磨能使晶粒尺寸减小到约 350 mm,从而降低材料的热导率,同时提高其电导率。球磨 16 h 条件下制备的 Bi0.88Ba0.06Pb0.06CuSeO陶瓷在 873 K 下具有最大功率因子,为 0.76 mW/(m K2),同时具有最大 ZT 值 1.18,分别是未掺杂 BiCuSeO 陶瓷材料的 2.71 倍和 2.19 倍。The bulk Bi1 2xBaxPbxCuSeO (x=0, 0.06) oxide semiconductor ceramics doping Ba/Pb in BiCuSeO were prepared by mechanical alloying (MA) and spark plasma sintering (SPS). The effects of Ba/Pb doping and ball milling (BM) time on the microstructure, thermoelectric properties, and hardness were investigated systematically. The results show that partial substitution of Bi in BiCuSeO with a small amount of Ba/Pb can significantly improve the conductivity and power factor of the material, while ball milling can reduce the grain size of the material to about 350 mm, thus reducing the thermal conductivity of the material and improving its electrical conductivity. The maximum power factor of Bi0.88Ba0.06Pb0.06CuSeO ceramics prepared by ball milling for 16 h is 0.76 mW/(m K2) at 873 K, and the maximum ZT value is 1.18, which is 2.71 times and 2.19 times higher than that of undoped BiCuSeO ceramics, respectively.

关 键 词：氧化物 BiCuSeO Ba/Pb 掺杂 纳米结构工程 热电性能 

分 类 号：TG15[金属学及工艺—热处理]