Effects of energy deposition on mechanical properties of sodium borosilicate glass irradiated by three heavy ions: P, Kr, and Xe  

作　　者：Xin Du Tian-Tian Wang Bing-Huang Duan Xiao-Yang Zhang Feng-Fei Liu Chang-Lin Lan Guang-Fu Wang Liang Chen Hai-Bo Peng Tie-Shan Wang 

机构地区：[1]School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China [2]Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875, China

出　　处：《Nuclear Science and Techniques》2019年第7期91-99,共9页核技术（英文）

基　　金：supported by the National Natural Science Foundations of China(Nos.11505085 and 11505086);the Fundamental Research Funds for the Central Universities(No.lzujbky-2018-72);DSTI Foundation of Gansu(No.2018ZX-07)

摘　　要：Sodium borosilicate glasses are candidate materials for high-level radioactive waste vitrification;therefore, understanding the irradiation effects in model borosilicate glass is crucial. Effects of electronic energy deposition and nuclear energy deposition induced by the impact of heavy ions on the hardness and Young’s modulus of sodium borosilicate glass were investigated. The work concentrates on sodium borosilicate glasses, henceforth termed NBS1 (60.0% SiO2, 15.0% B2O3, and 25.0% Na2O in mol%). The NBS1 glasses were irradiated by P, Kr, and Xe ions with 0.3 MeV, 4 MeV, and 5 MeV, respectively. The hardness and Young’s modulus of ion-irradiated NBS1 glasses were measured by nanoindentation tests. The relationships between the evolution of the hardness, the change in the Young’s modulus of the NBS1 glasses, and the energy deposition were investigated. With the increase in the nuclear energy deposition, both the hardness and Young’s modulus of NBS1 glasses dropped exponentially and then saturated. Regardless of the ion species, the nuclear energy depositions required for the saturation of hardness and Young’s modulus were apparent at approximately 1.2 × 10^20 keV/cm^3 and 1.8 × 10^20 keV/cm^3, respectively. The dose dependency of the hardness and Young’s modulus of NBS1 glasses was consistent with previous studies by Peuget et al. Moreover, the electronic energy loss is less than 4 keV/nm, and the electronic energy deposition is less than 3.0 × 10^22 keV/cm^3 in this work. Therefore, the evolution of hardness and Young’s modulus could have been primarily induced by nuclear energy deposition.Sodium borosilicate glasses are candidate materials for high-level radioactive waste vitrification;therefore, understanding the irradiation effects in model borosilicate glass is crucial. Effects of electronic energy deposition and nuclear energy deposition induced by the impact of heavy ions on the hardness and Young’s modulus of sodium borosilicate glass were investigated. The work concentrates on sodium borosilicate glasses, henceforth termed NBS1（60.0% SiO2, 15.0% B2O3, and 25.0% Na2O in mol%）. The NBS1 glasses were irradiated by P, Kr, and Xe ions with 0.3 MeV, 4 MeV, and 5 MeV, respectively.The hardness and Young’s modulus of ion-irradiated NBS1 glasses were measured by nanoindentation tests. The relationships between the evolution of the hardness, the change in the Young’s modulus of the NBS1 glasses, and the energy deposition were investigated. With the increase in the nuclear energy deposition, both the hardness and Young’s modulus of NBS1 glasses dropped exponentially and then saturated. Regardless of the ion species, the nuclear energy depositions required for the saturation of hardness and Young’s modulus were apparent at approximately 1.2 × 1020 keV/cm3 and 1.8 × 1020 keV/cm3,respectively. The dose dependency of the hardness and Young’s modulus of NBS1 glasses was consistent with previous studies by Peuget et al. Moreover, the electronic energy loss is less than 4 keV/nm, and the electronic energy deposition is less than 3.0 × 1022 keV/cm3 in this work. Therefore, the evolution of hardness and Young’s modulus could have been primarily induced by nuclear energy deposition.

关 键 词：BOROSILICATE glass Hardness Young's MODULUS Irradiation Nuclear energy deposition 

分 类 号：TL[核科学技术]