Analyzing the transient effects of 60Co gamma rays in a CIS by Monte Carlo method  

作　　者：Yuan-Yuan Xue Zu-Jun Wang Min-Bo Liu Rui Xu Hao Ning Wen Zhao Bao-Ping He Zhi-Bin Yao Jiang-Kun Sheng Wu-Ying Ma Guan-Tao Dong 

机构地区：[1]The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710613, China [2]School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China

出　　处：《Nuclear Science and Techniques》2019年第7期100-106,共7页核技术（英文）

基　　金：supported by the National Natural Science Foundation of China(Nos.11805155,11875223,and 11690043);the Chinese Academy of Sciences strategic pilot science and technology project(No.XDA15015000);the Innovation Foundation of Radiation Application(No.KFZC2018040201);the Foundation of State Key Laboratory of China(Nos.SKLIPR1803 and 1610)

摘　　要：The objective of this work is to analyze the transient effects of ^60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.The objective of this work is to analyze the transient effects of 60Co gamma rays in the CMOS image sensor（CIS） using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.

关 键 词：^60CO GAMMA RAYS Transient effects CMOS image sensor (CIS) GEANT4 

分 类 号：TL[核科学技术]