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作 者:Binbin Liu pujuan Ma Wenjing Yu Yadong Xu Lei Gao 刘彬彬;马普娟;於文静;徐亚东;高雷(School of Physical Science and Technology & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University;Jiangsu Key Laboratory of Thin Films, Soochow University)
机构地区:[1]School of Physical Science and Technology & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University [2]Jiangsu Key Laboratory of Thin Films, Soochow University
出 处:《Chinese Physics Letters》2019年第6期33-36,共4页中国物理快报(英文版)
基 金:Supported by the National Natural Science Foundation of China under Grant No 11774252;the Natural Science Foundation of Jiangsu Province under Grant No BK20161210;the Qing Lan project,the ‘333’ project under Grant No BRA2015353;the PAPD of Jiangsu Higher Education Institutions
摘 要:We present a planar model system of a silica covered with a monolayer of nonlinear graphene to achieve a tunable Goos–H?nchen(GH) shift in the terahertz range. It is theoretically found that the transition between a negative shift and a large positive one can be realized by altering the intensity of incident light. Moreover, by controlling the chemical potential of graphene and the incident angle of light, we can further control the tunable GH shift dynamically. Numerical simulations for GH shifts based on Gaussian waves are in good agreement with our theoretical calculations.We present a planar model system of a silica covered with a monolayer of nonlinear graphene to achieve a tunable Goos–H?nchen(GH) shift in the terahertz range. It is theoretically found that the transition between a negative shift and a large positive one can be realized by altering the intensity of incident light. Moreover, by controlling the chemical potential of graphene and the incident angle of light, we can further control the tunable GH shift dynamically. Numerical simulations for GH shifts based on Gaussian waves are in good agreement with our theoretical calculations.
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