激光辐射对供体-受体型聚合物忆阻器性能的影响  

Effect of Laser Irradiation on Performances of Donor-Acceptor-Type Copolymer Memristor

作　　者：袁帅 董瑞新[1,2] 刘汝新 闫循领 Yuan Shuai;Dong Ruixin;Liu Ruxin;Yan Xunling(School of Physics Science and Information Technology , Liaocheng University , Liaocheng , Shandong 252059, China;Shandong Key Laboratory of Optical Com m unication Science and Technology , Liaocheng , Shandong 252059, China)

机构地区：[1]聊城大学物理科学与信息工程学院,山东聊城252059 [2]山东省光通信科学与技术重点实验室,山东聊城252059

出　　处：《中国激光》2019年第5期343-348,共6页Chinese Journal of Lasers

基　　金：国家自然科学基金(61574071);山东省泰山学者专项建设项目基金

摘　　要：利用异靛蓝、丙烯二氧噻吩、噻吩单元组成的供体-受体类型半导体聚合物IPDT构建了有机电子器件Al/IPDT/ITO,该器件具有明显的忆阻特性,开/关电压为8 V/-7.5 V,高低电阻比达到了10^2以上。研究了不同波长激光的照射对器件忆阻性能的影响,结果表明:波长为632 nm、功率为3 mW的激光对忆阻性能的影响显著;照射60 s后,器件电流的走向发生了反转,开/关电压降低到-2.2 V/1.3 V,高低电阻比提高到10^4,电流降低了一个量级,且电流-电压曲线的涨落减小,有效降低了器件的功耗;稳定性循环测试次数由未经激光照射时的2000提高到3500,提高了数据读取的准确性和稳定性。Donor-acceptor-type semiconductor polymer IPDT composed of isoindigo, propylene dioxythiophene and thiophene unit was used to constructe an organic electronic device with a configuration of Al/IPDT/ITO. It was found that the device had obvious memory resistance characteristics with ON/OFF voltages of 8 V/-7.5 V and a high-low resistance ratio over 10~2. The effect of laser irradiation under different wavelengths on the memory resistance performances of the device was studied. The results show that a laser with 632-nm wavelength and 3-mW power strongly affects the memory resistance performances. After irradiation for 60 s, the current trend of the device is reversed. The ON/OFF voltagess are reduced to-2.2 V/1.3 V and the high-low resistance ratio is increased to 10~4. The current is decreased by an order of magnitude, the fluctuation of the current-voltage curve is decreased, and the power consumption of the device is effectively reduced. The number of stability cycle tests is increased from 2000 before laser irradiation to 3500, which improves the accuracy and stability of data reading.

关 键 词：材料 供体-受体聚合物 忆阻器 激光调控 

分 类 号：TN604[电子电信—电路与系统]