Continuous wave operation of GaAsBi microdisk lasers at room temperature with large wavelengths ranging from 1.27 to 1.41 μm  

作　　者：Xiu Liu Lijuan Wang Xuan Fang Taojie Zhou Guohong Xiang Boyuan Xiang Xueqing Chen Suikong Hark Hao Liang Shumin Wang Zhaoyu Zhang 

机构地区：[1]School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China [2]University of Chinese Academy of Sciences, Beijing 100049, China [3]Key Laboratory of Terahertz Solid-State Technology, Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai 200050, China [4]Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China [5]Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden

出　　处：《Photonics Research》2019年第5期508-512,共5页光子学研究（英文版）

基　　金：Shenzhen Key Laboratory Project Grant(ZDSYS201603311644527);Shenzhen Fundamental Research Fund(JCYJ20150611092848134,JCYJ20150929170644623);Shenzhen Science and Technology Innovation Commission(KQCX20140522143114399);President’s Fund(PF01000154);Foundation NANO X(18JG01);National Natural Science Foundation of China(NSFC)(11474365,61334004,61404152);National Basic Research Program of China(973Project)(2014CB643902);Vetenskapsradet(VR);Robotic Discipline Development Fund from Shenzhen Gov.(2016-1418);Open Project Program of Key Laboratory for Photonic and Electric Bandgap Materials,Ministry of Education,Harbin Normal University,China(PEBM201902)

摘　　要：Submicron-meter size GaAsBi disk resonators were fabricated with the GaAsBi/GaAs single-quantum-well(QW)-structure grown by molecular beam epitaxy. The GaAsBi/GaAs QW revealed very broad photoluminescence signals in the wavelength range of 1100–1400 nm at 300 K. The 750 nm diameter and 220 nm thick disk resonators were optically pumped and exhibited lasing characteristics with continuous wave operation at room temperature.To our knowledge, it is the first demonstration of a lasing wavelength longer than 1.3 μm with a maximum value of 1.4 μm in a GaAsBi/GaAs material system. The lasing wavelength spans about 130 nm by adjusting the disk diameter, covering almost the entire O band. The ultrasmall GaAsBi disk lasers may have great potential for highly dense on-chip integration with large tunability in the O band.Submicron-meter size GaAsBi disk resonators were fabricated with the GaAsBi/GaAs single-quantum-well(QW)-structure grown by molecular beam epitaxy. The GaAsBi/GaAs QW revealed very broad photoluminescence signals in the wavelength range of 1100–1400 nm at 300 K. The 750 nm diameter and 220 nm thick disk resonators were optically pumped and exhibited lasing characteristics with continuous wave operation at room temperature.To our knowledge, it is the first demonstration of a lasing wavelength longer than 1.3 μm with a maximum value of 1.4 μm in a GaAsBi/GaAs material system. The lasing wavelength spans about 130 nm by adjusting the disk diameter, covering almost the entire O band. The ultrasmall GaAsBi disk lasers may have great potential for highly dense on-chip integration with large tunability in the O band.

关 键 词：wave room diamete our 

分 类 号：TN248[电子电信—物理电子学]