低温溶液法制备氧化钼及其在QLEDs中的应用  

Low-temperature solution-processed molybdenum oxide and its application for QLEDs

作　　者：张婷婷[1,2] 顾小兵[2] 杨培志[1] 熊楠菲[2] 李凤 张芹[2] 李清华[2] ZHANG Tingting;GU Xiaobing;YANG Peizhi;XIONG Nanfei;LI Feng;ZHANG Qin;LI Qinghua(Key Laboratory of Ministry of Education for Advanced Technique & Preparation for Renewable Energy Materials,Yunnan Normal University,Kunming Yunnan 650500,China;Jiangxi Engineering Laboratory for Optoelectronics Testing Technology,Nanchang Hangkong University,Nanchang Jiangxi 330063,China)

机构地区：[1]云南师范大学可再生能源材料先进技术与制备教育部重点实验室,云南昆明650500 [2]南昌航空大学江西省光电检测技术工程实验室,江西南昌330063

出　　处：《太赫兹科学与电子信息学报》2019年第3期519-523,共5页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家自然科学基金面上基金资助项目(11774141;61765011);云南师范大学研究生科研创新基金资助项目;广东省普通高校青年创新人才类资助项目(2018KQNCX153);云南省基础研究重点资助项目(2017FA024)

摘　　要：空穴注入层(HIL)在量子点发光二极管(QLEDs)中有重要作用。使用低温溶液法制作了MoOx纳米颗粒,将其在氧化铟锡(ITO)玻璃上旋涂成膜后使用不同温度进行退火处理,并作为空穴注入层进行量子点发光二极管的制作。实验结果表明,氧化钼薄膜有着与ITO玻璃阳极和Poly-TPD空穴传输层匹配的能级,可用作量子点发光二极管的空穴注入层,而使用经100 ℃退火处理后的MoOx薄膜作为空穴注入层的器件性能最佳:器件启亮电压为2.5 V,最高外量子效率为11.6%,在偏压为10 V时,器件的最高亮度达到27 100 cd/m2。Hole Injection Layer(HIL) plays a key role in Quantum dot-based Light Emitting Diodes (QLEDs). Herein, MoOx nanoparticles are prepared with a solution method under low temperature, next they are coated on the surface of Indium Tin Oxide(ITO) substrate by means of spin casting with following anneal under different temperatures, and then used as HILs to fabricate QLEDs. The experimental results show that the energy level of MoOx film is matched to those of the ITO and Poly-TPD, and MoOx is suitable to be used as HIL for QLEDs. By analyzing the performance of all the fabricated devices, it can be concluded that the QLEDs, corresponding to the MoOx film annealed under 100 ℃, exhibits the best turn-on voltage, External Quantum Efficiency(EQE) and brightness. In detail, this device has a low turn-on voltage of 2.5 V, a high EQE of 11.6%, and the highest brightness of 27 100 cd/m 2 at 10 V.

关 键 词：氧化钼 低温溶液法 量子点 纳米颗粒 发光二极管 

分 类 号：TN304.2[电子电信—物理电子学]