高压GaN隔离栅驱动技术设计考虑  

Isolated Gate Drive Design Considerations for High Voltage GaN

作　　者：胡黎 冯旭东 明鑫[1] 张波[1] HU Li;FENG Xu-dong;MING Xin;ZHANG Bo(University of Electronic Science and Technology of China, Chengdu 610054, China)

机构地区：[1]电子科技大学

出　　处：《电力电子技术》2019年第6期108-110,共3页Power Electronics

基　　金：国家重点研发计划(SQ2017YFGX020136)~~

摘　　要：GaN晶体管相对于金属氧化物半导体场效应晶体管(MOSFET)器件有更小的导通电阻和栅电荷,在高速、高功率密度应用中独具优势。高速高能效电平转换器作为高侧栅极驱动的关键模块,主要决定高侧通道的传输延迟。但在高频应用中,电平转换器由于其传输延迟较大、功耗大及抗共模瞬态抑制(CMTI)能力弱等原因已不再适用。此处首先重点分析电平转换器存在的主要问题以及在高压应用下的不适用性,然后针对高压应用描述了几种替代电平转换器结构的隔离驱动结构并着重分析了数字隔离器的工作原理。数字隔离器由于其寄生电容小、传输延迟小以及抗共模噪声干扰能力强等优异的特性能够很好地满足高压的应用需求。Compared to metal -oxide -semiconductor field-effect transistor (MOSFET) devices, GaN transistors can achie ve smaller on resistance and gate charge which is especially suitable for high frequency and high power density ap plications. The high-speed energy-efficient level-shifter is a key block in high-side gate driver and determines high- side channel * s propagation delay. However, level-shifter is no longer suitable in high frequency due to its large propa gation delay,large power consumption and weak common-mode transient immunity.The main problems of level-shifter and the inapplicability of high-voltage applications are expressed clearly.For high-voltage applications, the comparison and analysis of several isolator are given in detail.And the operation principle of digital isolator is mainly analyzed. Digital isolator can meet the requirements of high-voltage applications well due to its low parasitic capacitance and low propagation delay and strong common-mode noise immunity.

关 键 词：数字隔离器 电平转换器 传输延迟 

分 类 号：TN305.95[电子电信—物理电子学]