面向智能配电网可信量测装置高储能密度的电力电容器介质Bi1.5ZnNb1.5O7（BZN）薄膜材料制备  

Preparation of Bi1.5ZnNb1.5O7（BZN） Film Material for Capacitors with High Energy Storage Density for Reliable Measuring Device of Smart Distribution Networks

作　　者：韩韬 么军[3] 葛荣刚[3] 姜宁[3] 鲁文[1,2] 葛磊蛟 HAN Tao;YAO Jun;GE Ronggang;JIANG Ning;LU Wen;GE Leijiao(NARI Group Corporation(State Grid Electric Power Research Institute), Nanjing 210003, China;NARI Technology Co., Ltd., Nanjing 211106, China;State Grid Tianjin Electric Power Company, Tianjin 300055, China;School of Electrical Information and Engineering, Tianjin University, Tianjin 300072, China)

机构地区：[1]南瑞集团有限公司(国网电力科学研究院有限公司),南京210003 [2]国电南瑞科技股份有限公司,南京211106 [3]国网天津市电力公司,天津300055 [4]天津大学电气信息与自动化工程学院,天津300072

出　　处：《电力电容器与无功补偿》2019年第3期84-88,95,共6页Power Capacitor & Reactive Power Compensation

基　　金：国家电网公司总部科技项目“城市配电网量测体系优化配置与关键特征参数辨识技术研究及示范”的资助

摘　　要：随着配电网向着可靠性、稳定性、安全性和交互性方向的发展,其对电力电容器的储能性能提出了更高的要求。为制备高储能密度的电力电容器用介质材料,利用磁控溅射技术在 Pt-Si 基底上制备 Bi1.5ZnNb1.5O7(BZN)薄膜,通过在氧气氛中进行后退火处理,有效地提高了 BZN 薄膜的结晶性能,并对不同退火条件下 BZN 薄膜的介电常数、介质损耗因数、漏电流密度、击穿场强和储能密度进行测试分析,表明:氧气氛退火处理能提高 BZN 薄膜的电学性能,当在 10 000 Pa 以上的氧气压下退火后,BZN 薄膜的储能密度达到 9.0 J/cm3左右,提高到未经过退火 BZN 薄膜的 4.5 倍。With the development of power distribution network toward reliability,stability,safetyand interactivity,which sets higher requirement for the charging performance of power capacitor.For preparing dielectric material of power capacitor with high energy density,Bi1.5ZnNb1.5O7 (BZN) thin film is prepared on Pt-Si substrates by the use of magnetron sputteringtechnology. The crystallizationperformance of BZNfilm is improved significantly through post-annealing treatment in the oxygen. The dielectric constant,loss tangent,leakage current density,breakdown field strength and energy density of BZN film at different annealing treatment are tested and studied,showing that the annealing treatment in the oxygen can improve electrical performance of BZN film. After annealing treatment above the oxygen pressure of 10 000 Pa,the energy storage density of BZN film reaches around 9.0 J /cm^3,which is about 4.5 times that of the un-annealed BZN film.

关 键 词：电力电容器 薄膜 储能密度 击穿场强 介电常数 

分 类 号：TM531.4[电气工程—电器]