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作 者:徐希 燕颖 任鑫[1] 姚政[1] 时雯[1] 余文琪 XU Xi;YAN Ying;REN Xin;YAO Zheng;SHI Wen;YU Wenqi(Nano-Science and Technology Research Center, Shanghai University, Shanghai 200444, China)
机构地区:[1]上海大学纳米科学与技术研究中心
出 处:《陶瓷学报》2019年第3期307-310,共4页Journal of Ceramics
基 金:上海市自然科学基金(17ZR1410300)
摘 要:改变Al2O3浓度,研究其对ZnO线性陶瓷电阻微观结构和电气性能的影响。通过XRD,SEM和一些电测设备对所制得的ZnO线性电阻进行综合分析。结果表明,提高Al2O3含量能增大ZnO线性陶瓷的电阻率,同时对其高线性度几乎没有影响。当Al2O3含量为1.5wt.%时,制得ZnO线性陶瓷密度为4.28 g cm-3,电阻率为821 Ω cm,非线性系数为1.00,温阻系数为1.21×10-3/℃,能量密度为495 J cm-3,综合电气性能表现良好。The concentration of Al2O3 was changed to study its effect on the microstructure and electrical properties of ZnO linear ceramic resistors. The linear resistance of the prepared ZnO was comprehensively analyzed by XRD, SEM and some electrical measuring equipment. The results show that increasing the Al2O3 content can increase the resistivity of ZnO linear ceramics, but has little effect on its high linearity. When the Al2O3 content is 1.5wt.%, the linear ceramic density of ZnO is 4.28 g cm-3, the resistivity is 821 Ω cm, the nonlinear coef ficient is 1.00, the temperature coef ficient is 1.21×10-3/°C, and the energy density is 495 J cm-3, the overall electrical performance is better.
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