降低ZnO电阻片在能量冲击下侧面失效率的研究  

Reduction of Side Failure Rate of the ZnO Varistors Under the Energy Impact

作　　者：厍海波 阮雪君 刘亚芸 田冰 李文江 朱成洋 SHE Haibo;RUAN Xuejun;LIU Yayun;TIAN Bing;LI Wenjiang;ZHU Chengyang(Jinguan Electric Co.,Ltd.,Nanyang 473000,China;Shanghai University,Shanghai 200444,China)

机构地区：[1]金冠电气股份有限公司,河南南阳473000 [2]上海大学,上海200444

出　　处：《电瓷避雷器》2019年第3期74-77,共4页Insulators and Surge Arresters

摘　　要：为了减少ZnO电阻片在能量冲击下侧面失效率,将不同配方的高阻釉施涂在电阻片的侧面,研究不同的高阻釉对于电阻片电性能的影响。结果表明:在电阻片的侧面施涂绝缘能力和膨胀系数匹配性均达到要求的高阻层,能够使电阻片的缺陷减少,均匀性提高,从而使电阻片的电性能提高,降低了ZnO电阻片在能量冲击下侧面失效率。In order to reduce the side failure rate of ZnO varistors under energy impact, the high resistance glaze with different formulations was applied on the side of the varistors, and the influence of different high resistance glaze on electrical properties of the varistors was studied. The results show that the suitable high resistance layer with insulation ability and coefficient of expansion matching on the side of the varistors can reduce the defects and increase the uniformity of the varistors, so that the electrical properties of the varistors can be improved. The side failure rate of the ZnO varistors under energy shock is reduced.

关 键 词：ZNO压敏陶瓷 高阻釉 电性能 能量冲击 失效率 

分 类 号：TN379[电子电信—物理电子学] TM862[电气工程—高电压与绝缘技术]