2～18 GHz超宽带低噪声放大器芯片研制  

Design of 2-18GHz Ultra-Wideband Low Noise Amplifier

作　　者：文晓敏 李斌[1] Wen Xiaomin;Li Bin(Shanghai Astronomical Observatory,Chinese Academy Sciences,Shanghai 200030,China;University of Chinese Academy Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海天文台,上海200030 [2]中国科学院大学,北京100049

出　　处：《天文研究与技术》2019年第3期278-284,共7页Astronomical Research & Technology

基　　金：国家自然科学基金(11473060,11590784)资助

摘　　要：低噪声放大器在射电天文望远镜接收机中是一个重要的前端组件,其性能对接收机的灵敏度和噪声有至关重要的影响。采用OMMIC公司70 nm GaAs mHEMT工艺研究和设计了一款工作频率为2~18 GHz的超宽带单片微波集成低噪声放大器芯片,芯片面积为2 mm×1 mm。放大器电路采用三级级联放大、双电源供电拓扑结构,常温在片测试结果显示,全频带增益大于28 dB,噪声温度平均值为93 K,直流功耗150 mW,无条件稳定。该放大器芯片覆盖了射电天文S,C,X,Ku 4个传统观测波段,适用于厘米波段超宽带接收前端和毫米波段超宽带中频放大模块。Low-noise amplifier is an important component in radio astronomical front-end.It will affect the sensitivity of receiving system directly.In this paper,an ultra-wideband monolithic microwave integrated low noise amplifier based on 70nm GaAs mHEMT process from OMMIC has been designed.The 2-18GHz frequency coverage of MMIC LNA covers traditional four astronomical bands,such as S-,C-,X-and Ku-band.It is suitable for the application on the ultra-wideband receiver development for centimeter wave length,and ultra-broadband IF amplifier module for millimeter wave length astronomy.With the DC power dissipation of 150mW,the measured results show that the 3-stage MMIC LNA achieves the gain over 28dB,and the average noise temperature is about 93K.The chip size is 2mm×1mm.

关 键 词：低噪声放大器 GAAS MHEMT 超宽带 单片微波集成电路 

分 类 号：TN722.3[电子电信—电路与系统]