GaAs微波小功率晶体管加速退化试验数据分析  

Data Analysis of Accelerated Degenerate Test for Micro-wave GaAs FET

作　　者：高金环[1,2] 迟雷[1,2] 陈龙坡 GAO Jin-huan;CHI Lei;CHEN Long-po(The 13th Research Institute,CECT,Shijiazhuang 050051;National Semiconductor Device Supervision and Inspection Center, Shijiazhuang 050051)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]国家半导体器件质量监督检验中心,石家庄050051

出　　处：《环境技术》2019年第3期9-11,25,共4页Environmental Technology

摘　　要：本文以GaAs 微波小功率晶体管为研究对象,分别开展不同温度应力的直流稳态、射频动态加速退化试验。通过分析不同温度应力下同种类型加速退化试验结果,揭示GaAs 微波小功率晶体管的退化失效时间与开尔文温度的倒数呈指数变化规律;通过比对相同温度应力下直流稳态、射频动态加速退化试验,发现同温度应力下,直流稳态较射频动态工作造成的GaAs 微波小功率晶体管饱和漏电流的变化更为剧烈。In this article, micro-wave GaAs FETs were taken as research objects which were conducted with DC static and RF dynamic acceleration degeneration test under different temperature stress. Through the analysis on test results of different temperature stress under the same type of acceleration degeneration, it revealed the index relationship between the degradation failure time of GaAs FETs and the reciprocal of Kelvin temperature. It’s found that under the same temperature stress, the saturation current of the device in DC static acceleration degeneration test has much more changes than that in RF dynamic acceleration degeneration test.

关 键 词：饱和漏电流 加速退化试验 直流静态 射频动态 失效率 

分 类 号：TN406[电子电信—微电子学与固体电子学]