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作 者:张根 黄自力[1] 张海军[2] 谭操[2] ZHANG Gen;HUANG Zi-li;ZHANG Hai-jun;TAN Cao(Hubei Key Laboratory for Efficient Utilization and Agglomeration of Metallurgical Mineral Resources,Wuhan University of Science and Technology,Wuhan 430081,China;The State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,China)
机构地区:[1]武汉科技大学冶金矿产资源高效利用与造块湖北省重点实验室,武汉430081 [2]武汉科技大学省部共建耐火材料与冶金国家重点实验室,武汉430081
出 处:《硅酸盐通报》2019年第6期1769-1776,共8页Bulletin of the Chinese Ceramic Society
基 金:国家自然科学基金面上项目(51472184,51472185,51502216);中国博士后科学基金(2014M560631);湖北省教育厅高等学校优秀中青年科技创新团队计划(T201602);湖北自然科学基金创新群体项目(2017CFA004)
摘 要:Bi4Ti3O12禁带间隙较窄,能在可见光下响应,因而具有比TiO2更好的光催化性能。但Bi4Ti3O12作为光催化剂应用存在着光量子效率不高、光生电子与空穴易结合及对可见光的吸收有限等问题。综述了近年来Bi4Ti3O12光催化剂的研究,研究表明通过元素掺杂及半导体复合等改性手段可以有效抑制光生电子与空穴的复合率,提高Bi4Ti3O12的光催化性能。最后对Bi4Ti3O12光催化剂未来的发展方向进行展望。Compared with TiO 2, Bi 4Ti 3O 12 semiconductor photocatalyst had better photocatalytic performance due to its narrow band gap and capacity of responding in visible light. However, the low quantum efficiency, easy recombination of electrons and holes, and low visible light absorption making the semiconductor photocatalyst far away from practical use. This paper reviews the recent research on Bi 4Ti 3O 12 photocatalysts, the researches show that the photocatalytic properties of Bi 4Ti 3O 12 can be improved by suppressing the recombination of electrons and holes by means of elemental doping and semiconductor recombination. At last,the prospects for future investigations of the Bi 4Ti 3O 12 semiconductor photocatalyst are proposed.
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