Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat  

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

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作  者:Hao Chen Xiuming Dou Kun Ding Baoquan Sun 

机构地区:[1]State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [2]College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

出  处:《Journal of Semiconductors》2019年第7期75-79,共5页半导体学报(英文版)

基  金:supported by the National Key Research and Development Program of China(Grant No.2016YFA0301202);the National Natural Science Foundation of China(Grant No.61674135)

摘  要:Uniaxial stress is a powerful tool for tuning exciton emitting wavelength, polarization, fine-structure splitting (FSS), and the symmetry of quantum dots (QDs). Here, we present a technique for applying uniaxial stress, which enables us in situ to tune exciton optical properties at low temperature down to 15 K with high tuning precision. The design and operation of the device are described in detail. This technique provides a simple and convenient approach to tune QD structural symmetry, exciton energy and biexciton binding energy. It can be utilized for generating entangled and indistinguishable photons. Moreover, this device can be employed for tuning optical properties of thin film materials at low temperature.Uniaxial stress is a powerful tool for tuning exciton emitting wavelength, polarization, fine-structure splitting(FSS), and the symmetry of quantum dots(QDs). Here, we present a technique for applying uniaxial stress, which enables us in situ to tune exciton optical properties at low temperature down to 15 K with high tuning precision. The design and operation of the device are described in detail. This technique provides a simple and convenient approach to tune QD structural symmetry, exciton energy and biexciton binding energy. It can be utilized for generating entangled and indistinguishable photons. Moreover, this device can be employed for tuning optical properties of thin film materials at low temperature.

关 键 词:UNIAXIAL stress electrically DRIVEN DEVICE low temperature quantum DOTS thin film materials 

分 类 号:TN[电子电信]

 

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