长脉冲辐照在线硅基APD的温度研究  

Study on the Temperature of Silicon-Based APD Irradiated by Long Pulse

作　　者：陈酒 张烨[1] 王頔[1] 魏智[1] 陈桂波[1] CHEN Jiu;ZHANG Ye;WANG Di;WEI Zhi;CHEN Guibo(School of Science,Changchun University of Science and Technology,Changchun 130022)

机构地区：[1]长春理工大学理学院

出　　处：《长春理工大学学报（自然科学版）》2019年第3期15-18,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：国家自然基金项目(61805024)

摘　　要：长脉冲激光与在线硅基APD相互作用会引起温度的变化,同时,在外置偏压时,不仅要考虑入射激光基于在线硅基APD探测器吸收而直接形成激光热能,还要考虑入射激光发生光电转换效应,结合在线硅基APD光电探测器的内部电场作用,形成光生电动势与光生电流,由电场对在线硅基APD探测器内部所做的功而间接形成焦耳热能。考虑激光热源项和焦耳热源项,实现对温度的理论分析,对脉冲激光作用过程中在线硅基APD有外置偏压的峰值温度略高于零偏电压时的峰值温度,以及脉冲激光作用结束后在线硅基APD退温时间远远大于零偏电压时的退温时间的现象给出了合理的解释。Long pulse laser interaction with online silicon-based APD will cause the change of temperature. When placing bias the incident laser based on online silicon-based,not only the direct heat formation formed by APD detector absorptions should be considered. But also the incident laser photovoltaic effect should be considered too,which is combined with the online silicon-based APD photoelectric detector,the internal electric fields of the formation of raw electromotive force or light current,the indirect formation formed by the work done inside the electric field of online silicon-based APD detector. In this paper,the laser heat source term and the joule heat source term are considered to achieve the theoretical analysis of temperature. The peak temperature of the external bias of the online silicon-based APD during the action of the pulsed laser is slightly higher than that of the zero bias voltage;and the function of the pulse laser online after the silicon-based APD annealing temperature and time is far greater than the phenomenon of zero bias voltage when the annealing temperature and time of reasonable explanation is given.

关 键 词：长脉冲激光 硅基APD 焦耳热能 热学模型 

分 类 号：TN248.1[电子电信—物理电子学]