关于SiC MOSFET雪崩特性的探讨  

Discussion on Avalanche Characteristics of SiC MOSFET

作　　者：王俊杰[1] 郭清[1] 盛况[1] WANG Junjie;GUO Qing;SHENG Kuang(Zhejiang University,Hangzhou 310027,China)

机构地区：[1]浙江大学

出　　处：《电工技术》2019年第11期18-21,共4页Electric Engineering

基　　金：国家重点研发计划项目(编号2016YFB0100603);自然科学基金项目(编号51577169)

摘　　要：针对SiCMOSFET的雪崩特性,利用UIS测试原理,通过功率半导体雪崩耐量测试台,对几大主流制造商的SiCMOSFET器件进行了毁坏性和非毁坏性的雪崩测试。通过测试,发现了同步信号高频震荡和雪崩电流采样不可靠的问题,提出了外接电流探头、与同步信号隔离的方法,改善了雪崩测试的可靠性。In view of the avalanche characteristics of SiC MOSFET,some destructive and non-destructive avalanche tests are performed on SiC MOSFET devices of several major manufactures through the power semiconductor avalanche tolerance test bench using the UIS test principle.In the process of testing,the phenomenon of high frequency oscillation of synchronizing signal and unreliability of avalanche current sampling are found.Then the method of external connection of current probe isolated with synchronizing signal is proposed,which improves the reliability of avalanche test.

关 键 词：SiCMOSFET 雪崩耐量 UIS测试 

分 类 号：TM93[电气工程—电力电子与电力传动]