Single Crystal Growth and Magnetoresistivity of Topological Semimetal CoSi  

Single Crystal Growth and Magnetoresistivity of Topological Semimetal CoSi

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作  者:D.S.Wu Z.Y.Mi Y.J.Li W.Wu P.L.Li Y.T.Song G.T.Liu G.Li J L.Luo 吴德胜;米振宇;李延杰;吴伟;李沛岭;宋友庭;刘广同;李岗;雒建林(Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190;School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190;Songshan Lake Materials Laboratory, Dongguan 523808)

机构地区:[1]Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190 [2]School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190 [3]Songshan Lake Materials Laboratory, Dongguan 523808

出  处:《Chinese Physics Letters》2019年第7期77-81,共5页中国物理快报(英文版)

基  金:Supported by the National Natural Science Foundation of China under Grant No 11874399;the National Key Research and Development Program of China under Grant No 2016YFA0300602

摘  要:We report single crystal growth of CoSi, which has recently been recognized as a new type of topological semimetal hosting fourfold and sixfold degenerate nodes. The Shubnikov–de Haas quantum oscillation(QO) is observed on our crystals. There are two frequencies originating from almost isotropic bulk electron Fermi surfaces, in accordance with band structure calculations. The effective mass, scattering rate, and QO phase difference of the two frequencies are extracted and discussed.We report single crystal growth of CoSi, which has recently been recognized as a new type of topological semimetal hosting fourfold and sixfold degenerate nodes. The Shubnikov–de Haas quantum oscillation(QO) is observed on our crystals. There are two frequencies originating from almost isotropic bulk electron Fermi surfaces, in accordance with band structure calculations. The effective mass, scattering rate, and QO phase difference of the two frequencies are extracted and discussed.

关 键 词:SINGLE CRYSTAL GROWTH been recognized as extracted and discussed 

分 类 号:O4[理学—物理]

 

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