Ge量级大满阱容量脉冲频率调制电路设计  

Design of Pulse Frequency Modulation Circuit with Full Capacity at Ge-Level

作　　者：蒋大钊 丁瑞军[1] JIANG Dazhao;DING Ruijun(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083 [2]中国科学院大学,北京100049

出　　处：《红外技术》2019年第7期666-671,共6页Infrared Technology

摘　　要：本文对一种提高红外焦平面读出电路满阱电荷容量的方法进行了研究。采用了基于脉冲频率调制结构的单元电路,与传统电路相比满阱电荷容量提高了1~2个量级。本文对该像元的电路结构、工作原理与信号误差进行了分析。单元电路前端的调制器将光电流信号调制成一系列固定频率的脉冲信号,计数器记录脉冲个数,脉冲个数与输入的光电流信号成正比,通过脉冲个数来表征光电流的信号量。使用0.35.m2P4M工艺进行了电路设计与验证。通过测试结果表明,最大电荷容量达到了3.5Ge,每个电荷包的电荷量为5.46ke,该方法的电荷容量提高了2个量级。This study investigates a method for improving the full well charge capacity of an infrared focal plane array readout circuit.The unit circuit based on the pulse frequency modulation structure is adopted.Compared with the traditional circuit,the full well charge capacity is increased by one to two orders of magnitude.The circuit structure,working principle,and signal error of the pixel are analyzed in this study.The modulator of the front end of the unit circuit modulates the photocurrent signal into a series of fixed frequency pulse signals.The counter records the number of pulses,which is proportional to the input photocurrent.A number of pulses is used to characterize the semaphore of the photocurrent.The circuit design and verification are carried out using the 0.35 m 2P4M process.The test results show that the maximum charge capacity is 3.5 Ge,and the charge of each charge pack is 5.46 ke.The charge capacity of this method increases by two orders of magnitude.

关 键 词：大电荷容量 脉冲频率调制 读出电路 

分 类 号：TN215[电子电信—物理电子学]