CL-TWE Mach–Zehnder electro-optic modulator based on InP-MQW optical waveguides  被引量:2

CL-TWE Mach–Zehnder electro-optic modulator based on InP-MQW optical waveguides

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作  者:Guang Qian Bin Niu Wu Zhao Qiang Kan Xiaowen Gu Fengjie Zhou Yuechan Kong Tangsheng Chen 钱广;牛斌;赵武;阚强;顾晓文;周奉杰;孔月婵;陈堂胜(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing 210016,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

机构地区:[1]Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing 210016,China [2]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出  处:《Chinese Optics Letters》2019年第6期36-40,共5页中国光学快报(英文版)

摘  要:In this Letter,we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode(CL-TWE)Mach–Zehnder modulator(MZM)based on InP-based multiple quantum well(MQW)optical waveguides.The device configuration mainly includes an optical Mach–Zehnder interferometer,a direct current electrode,two phase electrodes,and a CL-TWE consisting of a U electrode and an I electrode.The modulator was fabricated on a 3 in.InP epitaxial wafer by standard photolithography,inductively coupled plasma dry etching,wet etching,electroplating,etc.Measurement results show that the MZM exhibits a3 dB electro-optic bandwidth of about 31 GHz,a Vπof 3 V,and an extinction ratio of about 20 dB.In this Letter, we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode(CL-TWE) Mach–Zehnder modulator(MZM) based on InP-based multiple quantum well(MQW)optical waveguides. The device configuration mainly includes an optical Mach–Zehnder interferometer, a direct current electrode, two phase electrodes, and a CL-TWE consisting of a U electrode and an I electrode. The modulator was fabricated on a 3 in. InP epitaxial wafer by standard photolithography, inductively coupled plasma dry etching, wet etching, electroplating, etc. Measurement results show that the MZM exhibits a3 dB electro-optic bandwidth of about 31 GHz, a V_π of 3 V, and an extinction ratio of about 20 dB.

关 键 词:optical MACH multiple plasma WAVE was DB 

分 类 号:TN761[电子电信—电路与系统]

 

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