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作 者:Yuxiang Sun Mengxia Wang Xinle Wang Ying Zhou Bo Wang Zhengping Wang Fapeng Yu Xinguang Xu 孙玉祥;王梦霞;王新乐;周莹;王波;王正平;于法鹏;许心光(State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China;Key Laboratory of Functional Crystal Materials and Device (Shandong University),Ministry of Education,Jinan 250100,China)
机构地区:[1]State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China [2]Key Laboratory of Functional Crystal Materials and Device (Shandong University),Ministry of Education,Jinan 250100,China
出 处:《Chinese Optics Letters》2019年第6期45-48,共4页中国光学快报(英文版)
基 金:supported by the Natural Science Foundation of Shandong Province(No.ZR2017MF031)
摘 要:With tin diselenide(SnSe2)film as a saturable absorber(SA),the passively Q-switched self-frequency doubling(SFD)lasers were realized in Nd^3+:ReCa4O(BO3)3(Re=Y,Gd)crystals.For Nd:YCa4O(BO3)3 crystal,the maximum average output power at 532 nm was 19.6 mW,and the corresponding pulse repetition frequency,pulse duration,single pulse energy,and peak power were 17.6 kHz,91.9 ns,1.1μJ,and 12.1 W,respectively.For Nd:GdCa4 O(BO3)3 crystal,these values were 14.5 mW,22.1 kHz,48.7 ns,0.66μJ,and 13.5 W.With tin diselenide(SnSe2) film as a saturable absorber(SA), the passively Q-switched self-frequency doubling(SFD) lasers were realized in Nd3+:ReCa4O(BO3)3(Re = Y, Gd) crystals. For Nd:YCa4O(BO3)3 crystal, the maximum average output power at 532 nm was 19.6 mW, and the corresponding pulse repetition frequency, pulse duration, single pulse energy, and peak power were 17.6 kHz, 91.9 ns, 1.1 μJ, and 12.1 W, respectively. For Nd:GdCa4 O(BO3)3 crystal, these values were 14.5 mW, 22.1 kHz, 48.7 ns, 0.66 μJ, and 13.5 W.
关 键 词:With TIN DISELENIDE the passively Q-SWITCHED 0.66μJ and 13.5 W.
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