12 W high power InGaAsP/AlGaInP 755 nm quantum well laser  

作　　者：H. Martin Hu Jianyang Zhao Weimin Wang James Ho Langxing Kuang Wenbin Liu 胡海;赵健阳;汪卫敏;何晋国;邝朗醒;刘文斌(Research Institute of Tsinghua University in Shenzhen,Shenzhen 518057,China;Guangdong Provincial Key Laboratory of Optomechatronics,Shenzhen 518057,China;Shenzhen Raybow Optoelectronics Co.,Ltd.,Shenzhen 518055,China)

机构地区：[1]Research Institute of Tsinghua University in Shenzhen,Shenzhen 518057,China [2]Guangdong Provincial Key Laboratory of Optomechatronics,Shenzhen 518057,China [3]Shenzhen Raybow Optoelectronics Co.,Ltd.,Shenzhen 518055,China

出　　处：《Chinese Optics Letters》2019年第6期49-53,共5页中国光学快报（英文版）

基　　金：supported by the National Key R&D Program of China(No.2016YFB0401802);the Project of Committee for Science and Technology Innovation of Shenzhen(No.JSGG20160301095954267)

摘　　要：High power laser diodes(LDs)with a lasing wavelength between 700 and 780 nm have great potential in various medical uses.Here,we report our recent efforts in developing an InGaAsP/AlGaInP-based commercial high power edge-emitting LD,which has 755 nm emission peak with a world-record continuous wave output power of 12.7 W,the highest reported so far.The lack of Al atoms in the active region significantly lowers the chance of catastrophic optical damage during high power laser operation.Meanwhile,with an accumulated 3800 h running time,our ongoing aging tests reveal excellent reliability of our devices.High power laser diodes(LDs) with a lasing wavelength between 700 and 780 nm have great potential in various medical uses. Here, we report our recent efforts in developing an InGaAsP/AlGaInP-based commercial high power edge-emitting LD, which has 755 nm emission peak with a world-record continuous wave output power of 12.7 W, the highest reported so far. The lack of Al atoms in the active region significantly lowers the chance of catastrophic optical damage during high power laser operation. Meanwhile, with an accumulated 3800 h running time, our ongoing aging tests reveal excellent reliability of our devices.

关 键 词：High power LASER WAVELENGTH between 

分 类 号：O3[理学—力学]