基于Langmuir-Blodgett技术制备的二硫化钨可饱和吸收体在调Q固体激光器中的研究  

Langmuir-Blodgett Tungsten Disulfide Saturable Absorber for Q-switched Solid State Laser

作　　者：王江[1] 汪太进 刘思聪 王勇刚[1] WANG Jiang;WANG Tai-jin;LIU Si-cong;WANG Yong-gang(School of Physics and Information Technology, Shaanxi Normal University,Xi’an 710119,China)

机构地区：[1]陕西师范大学物理学与信息技术学院

出　　处：《聊城大学学报（自然科学版）》2019年第5期15-18,93,共5页Journal of Liaocheng University:Natural Science Edition

基　　金：国家自然科学基金项目(61378024);陕西省自然科学基金项目(2017JM6091)资助

摘　　要：基于Langmuir-Blodgett(LB)方法,研究了新型二硫化钨可饱和吸收体应用于Nd:GdVO4晶体中实现了Q激光的输出.结果表明,通过LB技术在石英玻璃片上制备的二硫化钨可饱和吸收体表面均匀,有利用实现稳定调Q脉冲输出.通过调节谐振腔,在泵浦功率为5.1W时实现了最窄脉冲宽度为337ns的调Q激光输出,相对应的重复频率为614.8kHz,平均输出功率为811mW,斜效率达到36.1%.Tungsten disulfide saturable absorber by Langmuir-Blodgett (LB) methods for passively Q-switched Nd:GdVO 4 laser was studied. Tungsten disulfide sheets with controllable thicknesses were deposited on quartz plate using LB method. By inserting tungsten disulfide saturable absorber into the Nd:GdVO 4 laser linear cavity, the laser pulses with the pulse duration of 337 ns, the repetition frequency of 614.8 kHz, the average output power of 811 mW, and the slop efficiency of 36.1% were obtained.

关 键 词：LB技术 二硫化钨 可饱和吸收体 被动调Q激光器 

分 类 号：TN248.1[电子电信—物理电子学]