GaN-based ultraviolet microdisk laser diode grown on Si  

作　　者：JIN WANG MEIXIN FENG RUI ZHOU QIAN SUN JIANXUN LIU YINGNAN HUANG YU ZHOU HONGWEI GAO XINHE ZHENG MASAO IKEDA HUI YANG 

机构地区：[1]Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China [2]University of Science and Technology Beijing, Beijing 100083, China [3]Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences,Nanchang 330200, China [4]School of Nano Technology and Nano Bionics, University of Science and Technology of China,Hefei 230026, China

出　　处：《Photonics Research》2019年第6期I0034-I0037,共4页光子学研究（英文版）

基　　金：National Key RD Program(2016YFB0400100,2016YFB0400104);National Natural Science Foundation of China(NSFC)(61534007,61604168,61775230,61804162,61874131);Key Frontier Scientific Research Program of the Chinese Academy of Sciences(QYZDBSSW-JSC014);The CAS Interdisciplinary Innovation Team,the Key RD Program of Jiangsu Province(BE2017079);Natural Science Foundation of Jiangsu Province(BK20160401,BK20180253);Natural Science Foundation of Jiangxi Province(20181ACB20002,20181BAB211022);Suzhou Science and Technology Program(SYG201725,SYG201846);Natural Science Foundation of Beijing Municipality(2184112,4173077);Fundamental Research Funds for the Central Universities,China(06400071,FRFBR-16-018A,FRF-TP-17-022A1);China Postdoctoral Science Foundation(2018M631333,2018M632408);State Key Laboratory of Reliability and Intelligence of Electrical Equipment(EERIKF2018001)

摘　　要：This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with a lasing wavelength of 386.3 nm at room temperature. The crack-free laser structure was epitaxially grown on Si substrates using an Al-composed down-graded Al N/AlGaN multilayer buffer to mitigate the mismatches in the lattice constant and coefficient of thermal expansion, and processed into “sandwich-like” microdisk structures with a radius of 12 μm. Air-bridge electrodes were successfully fabricated to enable the device electrical characterization. The electrically pumped lasing of the as-fabricated microdisk laser diodes was evidenced by the rapid narrowing down of electroluminescence spectra and dramatic increase in the light output power, as the current exceeded the threshold of 248 mA.This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with a lasing wavelength of 386.3 nm at room temperature. The crack-free laser structure was epitaxially grown on Si substrates using an Al-composed down-graded Al N/AlGaN multilayer buffer to mitigate the mismatches in the lattice constant and coefficient of thermal expansion, and processed into "sandwich-like" microdisk structures with a radius of 12 μm. Air-bridge electrodes were successfully fabricated to enable the device electrical characterization. The electrically pumped lasing of the as-fabricated microdisk laser diodes was evidenced by the rapid narrowing down of electroluminescence spectra and dramatic increase in the light output power, as the current exceeded the threshold of 248 mA.

关 键 词：LASER DIODE ULTRAVIOLET 

分 类 号：O4[理学—物理]