振荡操作冲击电压下绝缘子气隙缺陷局部放电特性研究  

Analysis for Partial Discharges Behavior in SF6 Gas Filled Void in Gas Insulated Switchgear under Oscillating Switching Impulses

作　　者：张崇兴[1] 任明[1] 周洁睿 董明[1] 阙波[2] Zhang Chongxing;Ren Ming;Zhou Jierui;Dong Ming;Que Bo(State Key Lab of Electrical Insulation & Power Equipment Xi’an Jiaotong University Xi’an 710049 China;State Grid Zhejiang Electric Power Corporation Hangzhou 310007 China)

机构地区：[1]电力设备电气绝缘国家重点实验室西安交通大学,西安710049 [2]国网浙江省电力公司,杭州310007

出　　处：《电工技术学报》2019年第14期3074-3083,共10页Transactions of China Electrotechnical Society

基　　金：国家电网公司科技资助项目(5211DS16000G)

摘　　要：通过搭建操作冲击电压下局部放电现场检测回路,试验探索振荡操作冲击电压下绝缘子气隙缺陷局部放电行为和产生机制,并对振荡操作冲击下局部放电脉冲序列特性进行建模与仿真研究。试验结果表明,振荡操作冲击电压下的局部放电脉冲随外施电压的上升呈现阶段性特征;放电起始和熄灭场强均随着气隙半径的增加而减小;相同半径的气隙在振荡冲击电压下的放电起始场强较工频交流电压下更大;操作冲击下的放电脉冲数和放电量随着外施峰值场强的提高呈现急剧上升趋势。此外,建立考虑电荷记忆效应和蒙特卡洛随机过程的局部放电模型,并通过仿真较好地解释和描述了首次放电时延结果及脉冲统计分布的试验结果。In this paper,the partial discharge detection circuit was built and the partial discharge behaviors in SF6 gas filled void in basin-type insulators excited by OSI(oscillating switching impulses)were experimentally explored.In order to reveal the mechanism hidden behind partial discharge under OSI,the modeling and simulation for partial discharge sequences were carried out.The results show that:the partial discharge sequences under OSI exhibit the character of stages with the increase of applied voltage;PDIE and PDEE decrease with the expansion of void;PDIE under OSI is larger than that under AC voltage with the same radius of void,but the partial discharge behaviors under OSI are more active(relatively lager number of pulses and magnitude)and show a rapidly rising trend.In addition,a partial discharge model considering charge memory effect and Monte Carlo stochastic process is established.The results of the first discharge delay and the statistical distribution of the pulses were well explained and described by simulation.

关 键 词：振荡操作冲击电压 局部放电 气体绝缘开关设备 气隙缺陷 SF6 

分 类 号：TM835[电气工程—高电压与绝缘技术]