大功率IGBT基区物理模型的非准静态建模方法综述  

Review of Non-quasi Static Modeling Method in the Base Region of High Power IGBT

作　　者：段耀强 罗毅飞[2] 肖飞[2] 马伟明[2] DUAN Yaoqiang;LUO Yifei;XIAO Fei;MA Weiming(School of Electrical and Electronics Engineering,Huazhong University of Science and Technology,Wuhan 430074,China;National Key Laboratory of Science and Technology on Vessel Integrated Power System,Naval University of Engineering,Wuhan 430033,China)

机构地区：[1]华中科技大学电气与电子工程学院,武汉430074 [2]海军工程大学舰船综合电力国防科技重点实验室,武汉430033

出　　处：《高电压技术》2019年第7期2062-2073,共12页High Voltage Engineering

基　　金：国家自然科学基金重大项目(51490681);国家重点基础研究发展计划(973计划)(2015CB251004)~~

摘　　要：在研究高压大功率绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)芯片电气物理模型的基础上,对现有研究成果中模型使用的非准静态建模方法进行了总结、分析、对比和分类。大功率IGBT半导体芯片具有承受高电压的低掺杂宽基区,该区域的非准静态表征一直以来都是IGBT模块物理建模的重难点。已有国内外研究人员针对该问题提出大量不同建模方法,但是缺乏对这些方法之间的区别、联系和优缺点等系统科学地归纳和总结。为此根据建模原理揭示了现有IGBT芯片物理模型漂移区非准静态建模方法的区别和联系,将其归纳为形函数模型、空间变换模型、时间变换模型以及集总电荷模型。首先,按照上述模型分类分析了每类建模方法所采用的数学原理。其次,基于模型求解方式的不同,对各类建模方法的优势和局限性进行了对比和讨论。研究内容和结果为IGBT芯片内部宽基区物理模型的准静态建模方法的研究和选取提供了理论指导。We review, analyze, and compare the non-quasi static modeling methods for the bipolar base region of high power IGBT chip published in the literature, and classify them into different categories.Because high-power IGBT semiconductor chips have low-doped wide-band areas which can withstand high voltage, the non-quasi static description of the wide base region is always a challenging task for the physical modeling of high-power IGBT. In view of this problem,many researchers proposed a lot of different modeling methods. However, the differences and connections between these methods, as well as the advantages and disadvantages were not summed up in a systematic way. According to the difference in mathematical solutions, the published physics-based models are classified into four classes: the shape function model, the transform model with respect to space, the transform model with respect to time and the lumped-charge model.The mathematical principle of each modeling method is expounded. Besides, based on the differences of mathematical types, the advantages and limitations of each approach are compared and analyzed. The research of this paper can provide theoretical guidance for the research and selection of the non-quasi static modeling method of the wide base region in the physical modeling of high power semiconductor devices.

关 键 词：绝缘栅双极晶体管(IGBT) 物理模型 建模方法 双极扩散方程 非准静态 

分 类 号：TN322.8[电子电信—物理电子学]